No | Part number | Description ( Function ) | Manufacturers | |
1 | 5N3011P | H5N3011P H5N3011P Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • Low leakage current • High speed switching Outline TO-3P D G S 1 2 3 Absolute Maximum Ratings Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche curr |
Renesas |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to 5N3011 |
Part No | Description ( Function) | Manufacturers | |
H5N3011P | Silicon N Channel MOS FET High Speed Power Switching H5N3011P Silicon N Channel MOS FET High Speed Power Switching REJ03G0385-0200 Rev.2.00 Aug.05.2004 Features • Low on-resistance • Low leakage current • High speed switching Outline TO-3P D G 1. Gate 2. Drain (Flange) 3. Source S 1 2 3 Absolute |
Renesas Technology |
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HD153011 | 2-7 RLL ENDEC BULLT-IN VFO
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Hitachi Semiconductor |
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ICS853011 | LVPECL/ECL FANOUT BUFFER Integrated Circuit Systems, Inc. ICS853011 LOW SKEW, 1-TO-2 DIFFERENTIAL-TO-2.5V/3.3V LVPECL/ECL FANOUT BUFFER FEATURES • 2 differential 2.5V/3.3V LVPECL / ECL outputs • 1 differential PCLK, nPCLK input pair • PCLK, nPCLK pair can accept the following |
ICST |
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ICS853011C | LVPECL/ECL FANOUT BUFFER PRELIMINARY Integrated Circuit Systems, Inc. ICS853011C LOW SKEW, 1-TO-2 DIFFERENTIAL-TO-2.5V/3.3V LVPECL/ECL FANOUT BUFFER FEATURES • 2 differential 2.5V/3.3V LVPECL / ECL outputs • 1 differential PCLK, nPCLK input pair • PCLK, nPCLK pair can accept |
ICST |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |