Datasheet 30J324 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	30J324	GT30J324 GT30J324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J324 High Power Switching Applications Fast Switching Applications Unit: mm · The 4th generation · Enhancement-mode · Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.05 µs (typ.)	Toshiba Semiconductor

30J Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
30J324	GT30J324 GT30J324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J324 High Power Switching Applications Fast Switching Applications Unit: mm · The 4th generation · Enhancement-mode · Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed:	Toshiba Semiconductor
30JL2C41	SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK 30JL2C41 TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE 30JL2C41 SWITCHING MODE POWER SUPPLY APPLICATON CONVERTER & CHOPPER APPLICATION Unit: mm ! Repetitive Peak Reverse Voltage : VRRM = 600 V ! Average Output Rectified Current : IO = 30 A ! Ultra Fast Rever	Toshiba Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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