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Datasheet 2SK3155 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | 2SK3155 | Silicon N Channel MOS FET 2SK3155
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS = 100 mΩ typ.
• High speed switching • 4 V gate drive device can be driven from 5 V source
Outline
REJ03G1080-0500 (Previous: ADE-208-768C)
Rev.5.00 Sep 07, 2005
RENESAS Package code: PRSS0003AD-A |
 Renesas |
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| 1 | 2SK3155 | Silicon N Channel MOS FET High Speed Power Switching 2SK3155
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-768C (Z) 4th. Edition Februaty 1999 Features
• Low on-resistance R DS = 100 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source
Outline
TO–220FM
D
G
1 2 S
1. Gate 2. Drain 3. Source
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 Hitachi Semiconductor |
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