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Datasheet 2SK30 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 117 | 2SK30 | Silicon N-Channel Power F-MOS FET Power F-MOS FETs
2SK3049
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown
unit: mm
9.9±0.3 4.6±0.2 2.9±0.2
s Applications
q Contactless relay q Diving circuit for a solenoid q Driving circuit |
 Panasonic Semiconductor |
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| 116 | 2SK30 | Small switching (30V/ 0.1A) Transistor
Small switching (30V, 0.1A)
2SK3019
FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Easily designed drive circuits. 5) Easy to parallel. FApplications Interfacing, switching (30V, 100mA) FStructure Si |
 ROHM Semiconductor |
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| 115 | 2SK30 | Silicon N Channel MOS FET High Speed Power Switching 2SK3069
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-694I (Z) 10th. Edition February 1999 Features
• Low on-resistance R DS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source
Outline
TO–220AB
D
G
1 2 S 3
1. Gate 2. Drain(Flange) |
 Hitachi Semiconductor |
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| 114 | 2SK30 | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3058
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
ORDERING INFORMATION
PART NUMBER 2SK3058 2SK3058-S 2SK3058-ZJ PACKAGE TO-220AB TO-262 TO-263
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor designed for high current switching applic |
 NEC |
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| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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