No | Part number | Description ( Function ) | Manufacturers | |
1 | 2SK2980 | Silicon N Channel MOS FET High Speed Power Switching 2SK2980 Silicon N Channel MOS FET High Speed Power Switching ADE-208-571B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0. 2 Ω typ. (VGS = 4 V, I D = 500 mA) • 2.5V gate drive devices. • Small package (MPAK) Outline MPAK 3 1 D 2 G 1. Source 2. Gate 3. Drain S 2SK2980 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to s |
Hitachi Semiconductor |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to 2SK2980 |
Part No | Description ( Function) | Manufacturers | |
2SK2900-01 | N-channel MOS-FET > Features - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - Avalanche Rated 2SK2900-01 FAP-IIIB Series N-channel MOS-FET 60V 14,5mΩ ±45A 60W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converter |
Fuji Electric |
|
2SK2901-01L | N-CHANNEL SILICON POWER MOS-FET 2SK2901-01L,S N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof T-Pack(L) FUJI POWER MOS-FET T-Pack(S) 10 +0.5 0.9 ±0.3 4.5 ±0.2 1.32 1.5 Max 9.3 ±0.5 1.2 ±0.2 0.8 —0.1 5.08 2.7 + |
Fuji Electric |
|
2SK2901-01S | N-CHANNEL SILICON POWER MOS-FET 2SK2901-01L,S N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof T-Pack(L) FUJI POWER MOS-FET T-Pack(S) 10 +0.5 0.9 ±0.3 4.5 ±0.2 1.32 1.5 Max 9.3 ±0.5 1.2 ±0.2 0.8 —0.1 5.08 2.7 + |
Fuji Electric |
|
2SK2902 | N-CHANNEL SILICON POWER MOS-FET 2SK2902-01MR N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOS-FET TO-220F15 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters 2.54 3. Sour |
Fuji Electric |
|
2SK2902-01MR | N-CHANNEL SILICON POWER MOS-FET 2SK2902-01MR N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOS-FET TO-220F15 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters 2.54 3. Sour |
Fuji Electric |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |