Datasheet 2SK2930 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	2SK2930	Silicon N Channel MOS FET High Speed Power Switching 2SK2930 Silicon N Channel MOS FET High Speed Power Switching ADE-208-553C (Z) 4th. Edition Jun 1998 Features • Low on-resistance R DS =0.020 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO–220AB D G 1 2 S 3 1. Gate 2. Drain(Flange 3. Sour	Hitachi Semiconductor

2SK2 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
2SK240	Silicon N-Channel TRANSISTOR	Toshiba
2SK2850	N-Channel Enhancement Mode Power MOSFET	Fuji Electric
2SK2645	N-channel MOS-FET 2SK2645-01MR FAP-IIS Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated N-channel MOS-FET 600V 1,2Ω 9A 50W > Outline Drawing > Applications Switching Regulators U	Fuji Electric

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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