No | Part number | Description ( Function ) | Manufacturers | |
1 | 2SK2315 | Silicon N-Channel MOS FET 2SK2315 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source. Suitable for DC-DC converter, motor drive, power switch, solenoid drive Outline UPAK 2 1 4 3 D G 1. Gate 2. Drain 3. Source 4. Drain S 2SK2315 Absolute Maximum |
Hitachi Semiconductor |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to 2SK2315 |
Part No | Description ( Function) | Manufacturers | |
2SK2311 | Silicon N Channel MOS Type Field Effect Transistor 2SK2311 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV) 2SK2311 Chopper Regulator, DC−DC Converter and Switching Regulator Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 36 mΩ (typ.) z High forward tran |
Toshiba Semiconductor |
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2SK2312 | N CHANNEL MOS TYPE (HIGH SPEED/ HIGH VOLTAGE SWITCHING/ CHOPPER REGULATOR/ DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS) 2SK2312 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L −π−MOSV) 2 2SK2312 Chopper Regulator, DC−DC Converter and Motor Drive Applications z 4-V gate drive z Low drain−source ON resistance z High forward transfer admittance z Low leakage current z Enhancem |
Toshiba Semiconductor |
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2SK2313 | Silicon N Channel MOS Type Field Effect Transistor 2SK2313 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV) 2SK2313 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 8 mΩ (typ.) z High forward transfer admit |
Toshiba Semiconductor |
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2SK2314 | Silicon N Channel MOS Type Field Effect Transistor 2SK2314 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV) 2SK2314 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 66 mΩ (typ.) z High forward transfer admi |
Toshiba Semiconductor |
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2SK2316 | Ultrahigh-Speed Switching Applications Ordering number : EN5300A N-Channel Silicon MOSFET 2SK2316 Ultrahigh-Speed Switching Applications Features • Low ON resistance. • Ultrahigh-speed switching. • Low-voltage drive (2.5V drive). Package Dimensions unit: mm 2062A-PCP [2SK2316] Specifications Absolute Maximu |
Sanyo Semicon Device |
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