|
|
Datasheet 2SK1807 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | 2SK1807 | Silicon N Channel MOS FET 2SK1807
Silicon N Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter
Outline
RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB)
|
 Renesas |
 |
| 2 | 2SK1807 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage
: VDSS= 900V(Min) ·Fast Switching Speed
isc Product Specification
2SK1807
APPLICATIONS ·High Breakdown Voltage
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE |
 Inchange Semiconductor |
|
| 1 | 2SK1807 | Silicon N-Channel MOS FET 2SK1807
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter
Outline
TO-220AB
D G
1
2
3 1. Gate 2. Drain (Flange) 3. Sourc |
 Hitachi Semiconductor |
|
| Esta página es del resultado de búsqueda del 2SK1807. Si pulsa el resultado de búsqueda de 2SK1807 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Enlace url :
[1]
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |