No | Part number | Description ( Function ) | Manufacturers | |
2 | 2SJ553L | Silicon P Channel MOS FET High Speed Power Switching 2SJ553(L),2SJ553(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-650B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.028 Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline LDPAK 4 D 1 G 1 4 2 3 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SJ553(L),2SJ553(S) Absolute Maximum Ratings (Ta = 25 |
Hitachi Semiconductor |
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1 | 2SJ553L | P-Channel MOSFET ( Transistor ) 2SJ553(L), 2SJ553(S) Silicon P Channel MOS FET Description High speed power switching REJ03G0900-0400 (Previous: ADE-208-650B) Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS (on) = 0.028 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching. Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 RENESAS Package code |
Renesas |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |