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Datasheet 2SD2353 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | 2SD2353 | Silicon NPN Triple Diffused Type TRANSISTOR TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD2353
Power Amplifier Applications
2SD2353
Unit: mm
• High DC current gain: hFE = 800 to 3200 • Low collector saturation voltage: VCE (sat) = 0.4 V (typ.)
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collec |
Toshiba Semiconductor |
2SD2 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
2SD2499 | SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR |
Toshiba Semiconductor |
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2SD2041 | TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE |
ROHM Semiconductor |
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2SD234 | Silicon NPN Power Transistors |
SavantIC |
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Número de pieza | Descripción | Fabricantes | |
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