No | Part number | Description ( Function ) | Manufacturers | |
1 | 2SC3383 | PNP/NPN Epitaxial Planar Silicon Transistors Ordering number:EN1943A Features · Adoption of FBET process. · AF amp. PNP/NPN Epitaxial Planar Silicon Transistors 2SA1392/2SC3383 AF Amp Applications Package Dimensions unit:mm 2003A [2SA1392/2SC3383] ( ) : 2SA1392 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Curr |
Sanyo Semicon Device |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to 2SC3383 |
Part No | Description ( Function) | Manufacturers | |
2SC3300 | SILICON POWER TRANSISTOR SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3300 DESCRIPTION ·With TO-3PN package ·Low saturation voltage ·Wide area of safe operation APPLICATIONS ·Power and general purpose application PINNING PIN 1 2 3 Base Collecto |
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2SC3302 | TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATION |
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2SC3303 | SILICON NPN EPITAXIAL TYPE TRANSISTOR TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3303 2SC3303 High Current Switching Applications DC-DC Converter Applications Industrial Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time |
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2SC3303 | Silicon NPN Power Transistor isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3303 DESCRIPTION ·High switching speed time ·Low collector-to-emitter saturation voltage ·Fast switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operat |
Inchange Semiconductor |
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2SC3306 | POWER TRANSISTORS(10A/400V/100W) A A A |
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1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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ON Semiconductor |
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