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Datasheet 2SC3127 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | 2SC3127 | Silicon NPN Epitaxial 2SC3127, 2SC3128, 2SC3510
Silicon NPN Epitaxial
Application
UHF/VHF wide band amplifier
Outline
MPAK 2SC3127
3 1 2
1. Emitter 2. Base 3. Collector
2SC3127, 2SC3128, 2SC3510
TO-92 (2) 2SC3128, 2SC3510
1. Base 2. Emitter 3. Collector 3 2 1
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to |
 Hitachi Semiconductor |
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| 2 | 2SC3127 | Silicon NPN Epitaxial 2SC3127
Silicon NPN Epitaxial
REJ03G0711-0300 (Previous ADE-208-1080A) Rev.3.00 Aug.10.2005
Application
UHF/VHF wide band amplifier
Outline
RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2
1. Emitter 2. Base 3. Collector
Note:
Marking for 2SC3127 is “ID–”.
Absolute Maximum Ra |
 Renesas |
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| 1 | 2SC3127 | Silicon NPN RF Transistor INCHANGE Semiconductor
isc RF Product Specification
isc Silicon NPN RF Transistor
2SC3127
DESCRIPTION ·Low Noise and High Gain NF = 2.2 dB TYP. @VCE = 5 V, IC = 5 mA, f = 900 MHz PG = 10.5 dB TYP. @VCE = 5 V, IC = 20 mA, f = 900 MHz
APPLICATIONS ·Designed for use in low-noise and small signal |
 Inchange Semiconductor |
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