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Datasheet 2SC2655 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | 2SC2655 | Silicon NPN Epitaxial Type TRANSISTOR 2SC2655
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC2655
Power Amplifier Applications Power Switching Applications
Industrial Applications Unit: mm
• Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW • High-speed s |
 Toshiba Semiconductor |
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| 3 | 2SC2655 | POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS UNISONIC TECHNOLOGIES CO., LTD 2SC2655
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS
FEATURES
*Low saturation voltage VCE(SAT)= 0.5V (Max.) *High speed switching time tstg=1.0µs (Typ.)
NPN SILICON TRANSISTOR
1 TO-92NL
*Pb-free plating product number: 2SC2655L
ORDERING INFORMATION
Or |
 Unisonic Technologies |
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| 2 | 2SC2655 | NPN General Purpose Transistors 2SC2655
NPN General Purpose Transistors
P b Lead(Pb)-Free
2 3 1.EMITTER 3.BASE 2.COLLECTOR 1
TO-92MOD
ELECTRICAL CHARACTERISTICS£¨
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current
Tamb |
 Weitron |
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| 1 | 2SC2655 | NPN Plastic Encapsulated Transistor 2SC2655
Elektronische Bauelemente 2A , 50V NPN Plastic Encapsulated Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
TO-92MOD
A D
Low saturation voltage：VCE(sat)=0.5V(Max)(IC=1A) High speed switching time：tstg=1μs(Typ.) Complementary |
 SeCoS |
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