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Datasheet 2SC2120 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 9 | 2SC2120 | TRANSISTOR (AUDIO POWER AMPLIFIER APPLICATIONS) 1112SC2120
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2120
Audio Power Amplifier Applications
Unit: mm
• High hFE: hFE (1) = 100~320 • 1 watts amplifier applications. • Complementary to 2SA950
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collecto |
 Toshiba Semiconductor |
 |
| 8 | 2SC2120 | (2SCxxxx) Medium Power Amplifiers and Switches w
w
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w
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t a .D
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m o
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|
 Micro Electronics |
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| 7 | 2SC2120 | NPN Transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
2SC2120 TRANSISTOR (NPN)
FEATURES z High DC Current Gain z Complementary to 2SA950
TO – 92
1. EMITTER 2. COLLECTOR 3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC RθJ |
 JIANGSU CHANGJIANG |
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| 6 | 2SC2120 | NPN Transistor TO-92L Plastic-Encapsulate Transistors
2SC2120
TRANSISTOR(NPN)
MAXIMUM RATINGS(Ta=25℃ unless otherwise noted)
Symbol
VCBO VCEO VEBO
IC PC Tj Tstg
Parameter
Collector-Base Voltage Collector-Emitter Voltage
Emitter-Base Voltage Collector Current
Collector Power Dissipation Junction Temperature |
 ETC |
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| Número de pieza | Descripción | Fabricantes | |
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