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Datasheet 2SA940 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 7 | 2SA940 | POWER TRANSISTORS(1.5A/150V/25W) A
A
A
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 Mospec Semiconductor |
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| 6 | 2SA940 | PNP EPITAXIAL SILICON TRANSISTOR(POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT) 2SA940
PNP
EPITAXIAL SILICON TRANSISTOR
POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT
TO-220
!
Complementary to 2SC2073
ABSOLUTE MAXIMUM RATING (Ta=25°c)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation Junction Te |
 Wing Shing Computer Components |
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| 5 | 2SA940 | Silicon PNP Power Transistor INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
2SA940
DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min) ·DC Current Gain : hFE= 40-140@ IC= -0.5A ·Complement to Type 2SC2073 APPLICATIONS ·Designed for use in general purpose power ampli |
 Inchange Semiconductor |
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| 4 | 2SA940 | Plastic-Encapsulated Transistors Transys
Electronics
L I M I T E D
TO-220 Plastic-Encapsulated Transistors
2SA940
TRANSISTOR (PNP)
TO-220
1. BASE 2. COLLECTOR
FEATURES Power dissipation PCM : 1.5 W (Tamb=25℃)
3. EMITTER
Collector current : -1.5 A ICM Collector-base voltage V V(BR)CBO : -150 Operating and storage junction tem |
 TRANSYS |
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