No | Part number | Description ( Function ) | Manufacturers | |
6 | 2N7002T | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 2N7002T N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features · · · · · · · · · · · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package SOT-523 TOP VIEW A D B C G G S NEW PRODUCT Dim A B C D G H N M Min 0.15 0.75 1.45 ¾ 0.90 1.50 0.00 0.60 0.10 0.10 0.45 |
Diodes Incorporated |
|
5 | 2N7002T | N-Channel MOSFET JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate MOSFETS 2N7002T MOSFET (N-Channel) V(BR)DSS 60 V RDS(on)MAX 5Ω@10V 7Ω@5V ID 115mA SOT-523 3 1. GATE 2. SOURCE 3. DRAIN 1 2 FEATURE z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability MARKING |
JCET |
|
4 | 2N7002T | N-Channel Enhancement Mode Field Effect Transistor 2N7002T — N-Channel Enhancement Mode Field Effect Transistor October 2007 2N7002T N-Channel Enhancement Mode Field Effect Transistor Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant D S G SOT - 523F Marking : AA A |
Fairchild Semiconductor |
|
3 | 2N7002T | Small Signal MOSFET Elektronische Bauelemente 2N7002T 115 mAMPS, 60VOLTS, RDS(on)=7.5 W Small Signal MOSFET RoHS Compliant Product Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–523 MAXIMUM RATINGS Rating Drain–Source Voltage Drain–Gate Voltage (RGS = 1.0 MΩ) Gate–Source Voltage – Continuous – Non–repetitive (tp ≤ 50 µs) Symbol VDSS VDGR Value 60 60 Unit Vdc Vdc |
SeCoS |
|
2 | 2N7002T | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 2N7002T 300mA, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N7002T uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * High Density Cell Design for Low RDS(ON). * Voltage Controlled Small Signal Sw |
Unisonic Technologies |
|
1 | 2N7002TB | 60V N-CHANNEL ENHANCEMENT MODE MOSFET 2N7002TB 60V N-CHANNEL ENHANCEMENT MODE MOSFET FEATURES • RDS(ON), VGS@10V,IDS@500mA=5Ω • RDS(ON), [email protected],IDS@50mA=7.5Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc. • Lead free in compli |
Pan Jit International |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |