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Datasheet 2N7002LT1 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 2N7002LT1 | CASE 318-08/ STYLE 21 SOT-23 (TO-236AB) MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N7002LT1/D
TMOS FET Transistor
N–Channel Enhancement
3 DRAIN 1 GATE
2N7002LT1
Motorola Preferred Device
3
2 SOURCE
MAXIMUM RATINGS
Rating Drain–Source Voltage Drain–Gate Voltage (RGS = 1.0 MΩ) Drain Current — Continuous T |  Motorola Inc | data |
| 2 | 2N7002LT1 | N-CHANNEL ENHANCEMENT |  TRSYS | data |
| 3 | 2N7002LT1 | Small Signal MOSFET 115 mAmps/ 60 Volts |  Leshan Radio Company | mosfet |
2N7 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2N70 | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 2N70
2 Amps, 700 Volts N-CHANNEL POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC 2N70 is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. T  Unisonic Technologies mosfet | | |
| 2 | 2N70-M | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
2N70-M
Preliminary
2 Amps, 700 Volts N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N70-M is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characterist Unisonic Technologies mosfet | | |
| 3 | 2N7000 | N-CHANNEL MOSFET 2N7000
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions TO-92 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-92 Plastic Package.
特征 / Features
灵敏的控制级触发电流和很低的维持电流。 Sensitive gate trigger current and Low Holding current.
用途 / Applic  BLUE ROCKET ELECTRONICS mosfet | | |
| 4 | 2N7000 | Small Signal MOSFET 2N7000
Small Signal MOSFET
200 mA, 60 V N-Channel
Drain
Gate
Source
1. Source 2.Gate 3.Drain TO-92 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Drain Source Voltage
Drain-Gate Voltage (RGS = 1 MΩ)
Gate-source Voltage Drain Current
Continuous Non-repetitive ( tp ≤ 50 �  SEMTECH mosfet | | |
| 5 | 2N7000 | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
INTERFACE AND SWITCHING APPLICATION.
FEATURES High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capablity.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
Gate-Source Vol  KEC transistor | | |
| 6 | 2N7000 | Small Signal MOSFET WEITRON
Small Signal MOSFET N-Channel
3 DRAIN
Features:
*Low On-Resistance : 5Ω *Low Input Capacitance: 60PF *Low Out put Capacitance : 25PF *Low Threshole :1.4V(TYE) *Fast Switching Speed : 10ns
2 GATE
1 SOURCE
2N7000
TO-92
1. SOURCE 2. GATE 3. DRAIN
1 2 3
Maximum Ratings (TA=25 C Unless  WEITRON mosfet | | |
| 7 | 2N7000 | N-Channel Enhancement Mode Power MosFET Elektronische Bauelemente
2N7000
200mA,60V,RDS(ON) 6 N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
The 2N7000 is designed for high voltage, high speed applications such as switching regulators, converters, solenoid and relay drives.
D
SEATING PLANE
b1
TO-92
E S1
 SeCoS mosfet | |
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