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2N7002DW PDF Datasheet

The 2N7002DW is Dual N-channel MOSFET, Small-signal-transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
7 2N7002DW
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

NEW PRODUCT 2N7002DWA DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 60V RDS(ON) 8Ω @ VGS = 5V 6Ω @ VGS = 10V Package SOT363 ID TA = +25°C 170mA 200mA Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management appl

Diodes Incorporated
Diodes Incorporated
pdf
6 2N7002DW
Dual N-channel MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETs 2N7002DW V(BR)DSS 60 V Dual N-channel MOSFET RDS(on)MAX  5Ω@10V  7Ω@5V   FEATURE z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability ID 115mA SOT-363 6 5 4  1 2 3 APPLICATION z Load

JCET
JCET
pdf
5 2N7002DW
Dual N-Channel MOSFET

2N7002DW Dual N-Channel MOSFET 3 2 1 6 5 4 Features: *Low On-Resistance : 7.5 Ω *Low Input Capacitance: 22PF *Low Out put Capacitance : 11PF *Low Threshole :1 .5V(TYE) *Fast Switching Speed : 11ns 1 2 3 4 5 6 SOT-363(SC-88) Mechanical Data: *Case: SOT-363, Molded Plastic *Case Material-UL Flammability Rating 94V-0 *Terminals: Solderable per MIL-STD-202, Method 208

Weitron Technology
Weitron Technology
pdf
4 2N7002DW
N-Channel Enhancement Mode Field Effect Transistor

2N7002DW — N-Channel Enhancement Mode Field Effect Transistor January 2015 2N7002DW N-Channel Enhancement Mode Field Effect Transistor Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant SC70-

Fairchild Semiconductor
Fairchild Semiconductor
pdf
3 2N7002DW
Small-Signal-Transistor

OptiMOS™ Small-Signal-Transistor Features • Dual N-channel • Enhancement mode • Logic level • Avalanche rated • Fast switching • Qualified according to AEC Q101 • 100% lead-free; RoHS compliant • Halogen-free according to IEC61249-2-21 2N7002DW Product Summary VDS RDS(on),max ID VGS=10 V VGS=4.5 V 60 V 3W 4 0.3 A PG-SOT363 65 4 1 2 3 Type Package Tap

Infineon Technologies
Infineon Technologies
pdf
2 2N7002DW
DUAL N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 2N7002DW 300mA, 60V DUAL N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N7002DW uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * High Density Cell Design for Low RDS(ON). * Voltage Controlled Small Si

Unisonic Technologies
Unisonic Technologies
pdf

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