No | Part number | Description ( Function ) | Manufacturers | |
1 | 28LV64A | 64K (8K x 8) Low Voltage CMOS EEPROM 28LV64A 64K (8K x 8) Low Voltage CMOS EEPROM FEATURES • 2.7V to 3.6V Supply • Read Access Time—300 ns • CMOS Technology for Low Power Dissipation - 8 mA Active - 50 µA CMOS Standby Current • Byte Write Time—3 ms • Data Retention >200 years • High Endurance - Minimum 100,000 Erase/Write Cycles • Automatic Write Operation - Internal Control Timer - Auto-Clear B |
Microchip Technology |
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Recommended search results related to 28LV64A |
Part No | Description ( Function) | Manufacturers | |
28LV64 | 64K-Bit CMOS PARALLEL EEPROM CAT28LV64 64K-Bit CMOS PARALLEL EEPROM FEATURES ■ 3.0V to 3.6 V Supply ■ Read access times: ■ CMOS and TTL compatible I/O ■ Automatic page write operation: H GEN FR ALO EE LE A D F R E ETM – 150/200/250ns ■ Low power CMOS dissipation: – 1 to 32 bytes in 5ms |
Catalyst |
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AT28LV64B | 64K 8K x 8 Low Voltage CMOS E2PROM with Page Write and Software Data Protection AT28LV64B Features • • • • • • • • • • • Single 3.3V ± 10% Supply 3-Volt-Only Read and Write Operation Software-Protected Programming Low Power Dissipation 15 mA Active Current 20 µA CMOS Standby Current Fast Read Access Time − 200 ns Automatic Page Wr |
ATMEL Corporation |
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CAT28LV64 | 64K-Bit CMOS PARALLEL E2PROM Preliminary CAT28LV64 64K-Bit CMOS PARALLEL E2PROM FEATURES s 3.0V to 3.6 V Supply s Read Access Times: s CMOS and TTL Compatible I/O s Automatic Page Write Operation: – 250/300/350ns s Low Power CMOS Dissipation: – 1 to 32 Bytes in 5ms – Page Load Timer s End of Write D |
Catalyst Semiconductor |
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CAT28LV64 | 64K-Bit CMOS PARALLEL EEPROM Preliminary CAT28LV64 64K-Bit CMOS PARALLEL E2PROM FEATURES s 3.0V to 3.6 V Supply s Read Access Times: s CMOS and TTL Compatible I/O s Automatic Page Write Operation: – 250/300/350ns s Low Power CMOS Dissipation: – 1 to 32 Bytes in 5ms – Page Load Timer s End of Write D |
Catalyst Semiconductor |
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CAT28LV64G-15T | 64K-Bit CMOS PARALLEL EEPROM CAT28LV64 64K-Bit CMOS PARALLEL EEPROM FEATURES ■ 3.0V to 3.6 V Supply ■ Read access times: ■ CMOS and TTL compatible I/O ■ Automatic page write operation: H GEN FR ALO EE LE A D F R E ETM – 150/200/250ns ■ Low power CMOS dissipation: – 1 to 32 bytes in 5ms |
Catalyst Semiconductor |
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Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |