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Datasheet 11NM50N Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 27 | 11N06LT | PHB11N06LT Philips Semiconductors
Product specification
TrenchMOS™ transistor Logic level FET
FEATURES
• ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance
PH |
 NXP Semiconductors |
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| 26 | 11N120CN | HGTG11N120CN HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS
Data Sheet December 2001
43A, 1200V, NPT Series N-Channel IGBT
The HGTG11N120CN, HGTP11N120CN, and
HGT1S11N120CNS are Non-Punch Through (NPT) IGBT
Features
• 43A, 1200V, TC = 25oC • 1200V Switching SOA Capability • Typical Fall T |
 Fairchild Semiconductor |
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| 25 | 11N40C | FQP11N40C FQP11N40C / FQPF11N40C — N-Channel QFET® MOSFET
FQP11N40C / FQPF11N40C
N-Channel QFET® MOSFET
400 V, 10.5 A, 530 mΩ
November 2013
Features
• 10.5 A, 400 V, RDS(on) = 530 mΩ (Max.) @ VGS = 10 V, ID = 5.25 A
• Low Gate Charge (Typ. 28 nC) • Low Crss (Typ. 85 pF) • 100% Avalanche Test |
Fairchild Semiconductor |
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| 24 | 11N50 | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 11N50
Preliminary Power MOSFET
500V N-CHANNEL MOSFET
DESCRIPTION
The UTC 11N50 is an N-channel enhancement mode Power FET. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state resistance. It also |
 Unisonic Technologies |
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