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Datasheet 11N60E Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | 11N60C3 | SPP11N60C3 SPP11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance
P-TO220-3-31
1 2 3
VDS @ Tjmax RDS(on) I |
 Infineon Technologies |
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| 4 | 11N60K-MT | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
11N60K-MT
Preliminary
11A, 600V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 11N60K-MT is an N-channel enhancement mode power MOSFET. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state resistan |
 Unisonic Technologies |
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| 3 | 11N60S5 | SPP11N60S5 SPP11N60S5, SPB11N60S5 SPI11N60S5 Cool MOS™ Power Transistor
VDS RDS(on) ID
P-TO262 P-TO263-3-2
600 0.38 11
V Ω A
Feature
• New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective |
 Infineon Technologies AG |
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| 2 | 11N65C3 | SPP11N65C3
SPP11N65C3, SPA11N65C3 SPI11N65C3 Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance
P-TO220-3-31
1 2 3
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Infineon Technologies |
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nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
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