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Datasheet 10N60 Equivalent ( PDF )

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15 10N60   N-Channel Power MOSFET / Transistor

SEMICONDUCTOR 10N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (10A, 600Volts) DESCRIPTION The Nell 10N60 is a three-terminal silicon device with current conduction capability of 10A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. thr
nELL
nELL
datasheet 10N60 pdf
14 10N60   N-Channel Mosfet Transistor

INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification 10N60 ·FEATURES ·Drain Current –ID= 9.2A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.83Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive
Inchange Semiconductor
Inchange Semiconductor
datasheet 10N60 pdf
13 10N60   N-CHANNEL MOSFET

10N60(F,B,H) 10A mps,600 Volts N-CHANNEL MOSFET FEATURE  10A,600V,RDS(ON)=0.85Ω@VGS=10V/5A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 10N60 ITO-220AB 10N60F TO-263 10N60B TO-262 10N60H Absolute Maximum Ratings(TC=2
CHONGQING PINGYANG
CHONGQING PINGYANG
datasheet 10N60 pdf
12 10N60   600/650 Volts N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD Power MOSFET 10N60 10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state res
Unisonic Technologies
Unisonic Technologies
datasheet 10N60 pdf


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SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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