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Datasheet 07N65C3 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 07N65C3 | SPP07N65C3 SPP07N65C3, SPI07N65C3 SPA07N65C3 CoolMOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance
P-TO220-3-31
1 2 3
V DS RDS(on) ID
PG-TO2 |  Infineon | data |
07N Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 07N03LBG | IPP07N03LBG IPP07N03LB G
OptiMOS®2 Power-Transistor
Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistanc Infineon data | | |
| 2 | 07N60C2 | SPA07N60C2 www.DataSheet4U.net
Final data
SPP07N60C2, SPB07N60C2 SPA07N60C2
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances
P-TO220-3-31
Product Summary VDS  Infineon Technologies data | | |
| 3 | 07N60C3 | Power Transistor SPP07N60C3 SPI07N60C3, SPA07N60C3
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge
VDS @ Tjmax RDS(on) ID
650 0.6 7.3
V Ω A
• Periodic avalanche rated
PG-TO220FP PG-TO262
PG-TO220
• Extreme dv/dt rated
2
• High peak curren Infineon transistor | | |
| 4 | 07N60S5 | SPI07N60S5 Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance
SPP07N60S5 SPI07N60S5
VDS RDS(on Infineon Technologies data | | |
| 5 | 07N65C3 | SPP07N65C3 SPP07N65C3, SPI07N65C3 SPA07N65C3 CoolMOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance
P-TO220-3-31
1 2 3
V DS RDS(on) ID
PG-TO2 Infineon data | | |
| 6 | 07N70CP-A | N Channel Enhancement mode Power MOSFET Silicon Standard mosfet | | |
| 7 | 07N70CR-A | N Channel Enhancement mode Power MOSFET Silicon Standard mosfet | |
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