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Número de pieza | Si2351DS | |
Descripción | P-Channel 20-V (D-S) MOSFET | |
Fabricantes | Vishay | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de Si2351DS (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! P-Channel 20-V (D-S) MOSFET
Si2351DS
Vishay Siliconix
MOSFET PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
ID (A)a
0.115 at VGS = - 4.5 V
- 3.0
- 20
0.205 at VGS = - 2.5 V
- 2.2
Qg (Typ.)
3.2 nC
FEATURES
• Halogen-free Option Available
• TrenchFET® Power MOSFET
• PWM Optimized
• 100 % Rg Tested
RoHS
COMPLIANT
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2351DS (G1)*
* Marking Code
Ordering Information: Si2351DS-T1-E3 (Lead (Pb)-free)
Si2351DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
≤5s
Steady State
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under Steady State conditions is 130 °C/W.
Symbol
RthJA
RthJF
Typical
90
60
Limit
- 20
± 12
- 2.8
- 2.4
- 2.2b, c
- 1.8b, c
- 10
- 2.0
- 0.91b, c
2.1
1.5
1.0b, c
0.7b, c
- 55 to 150
Maximum
115
75
Unit
V
A
W
°C
Unit
°C/W
Document Number: 73702
S-80642-Rev. C, 24-Mar-08
www.vishay.com
1
1 page TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
4 2.4
Si2351DS
Vishay Siliconix
3 1.8
2 1.2
1 0.6
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
0.0
0
25 50 75 100 125 150
TC - Case Temperature (°C)
Power Derating, Junction-to-Foot
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73702
S-80642-Rev. C, 24-Mar-08
www.vishay.com
5
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet Si2351DS.PDF ] |
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