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Datasheet IS42S16160 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | IS42S16160 | 16Meg x16 256-MBIT SYNCHRONOUS DRAM IS42S16160
16Meg x16
256-MBIT SYNCHRONOUS DRAM
SEPTEMBER 2009
FEATURES
• Clock frequency: 166, 143, 133 MHz
• Fully synchronous; all signals referenced to a positive clock edge
• Internal bank for hiding row access/precharge
• Power supply
IS42S16160
Vdd Vddq 3.3V |  Integrated Silicon Solution | data |
| 2 | IS42S16160B | 16Meg x16 256-MBIT SYNCHRONOUS DRAM IS42S83200B IS42S16160B
32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM
ISSI
®
PRELIMINARY INFORMATION MAY 2006
FEATURES
• Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge
• Internal bank
OVERVIEW ISSI's 256Mb Synchrono | Integrated Silicon Solution | data |
| 3 | IS42S16160D | 256-MBIT SYNCHRONOUS DRAM IS42S83200D, IS42S16160D IS45S83200D, IS45S16160D
32Meg x 8, 16Meg x16 JUNE 2009 256-MBIT SYNCHRONOUS DRAM
FEATURES
• Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge � | Integrated Silicon Solution | data |
| 4 | IS42S16160J | 256Mb SYNCHRONOUS DRAM IS42S83200J, IS42S16160J IS45S83200J, IS45S16160J
32Meg x 8, 16Meg x16
256Mb SYNCHRONOUS DRAM
ADVANCED INFORMATION MARCH 2013
FEATURES
• Clock frequency: 166, 143 MHz
• Fully synchronous; all signals referenced to a positive clock edge
• Internal bank for hiding row access/precharge
|  ISSI | data |
IS4 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | IS41C16100 | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE IS41C16100 IS41LV16100
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
FEATURES
• TTL compatible inputs and outputs; tristate I/O • Refresh Interval: — Auto refresh Mode: 1,024 cycles /16 ms — RAS-Only, CAS-before-RAS (CBR), and Hidden — Self refresh Mode - 1,024 cycles / 128ms • JEDEC Integrated Silicon Solution data | | |
| 2 | IS41C16100S | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE IS41C16100S IS41LV16100S
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
FEATURES
• Extended Data-Out (EDO) Page Mode access cycle • TTL compatible inputs and outputs; tristate I/O • Refresh Interval: Refresh Mode: 1,024 cycles /16 ms RAS-Only, CAS-before-RAS (CBR), and Hidden Self refresh Mo Integrated Silicon Solution data | | |
| 3 | IS41C16105 | 1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE IS41C16105 IS41LV16105
1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
FEATURES
• TTL compatible inputs and outputs; tristate I/O • Refresh Interval: — 1,024 cycles/16 ms • Refresh Mode: — RAS-Only, CAS-before-RAS (CBR), and Hidden • JEDEC standard pinout • Single power supply: — 5  Integrated Silicon Solution Inc data | | |
| 4 | IS41C16105 | 1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE IS41C16105 IS41LV16105
FEATURES
1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
TTL compatible inputs and outputs; tristate I/O Refresh Interval: 1,024 cycles/16 ms Refresh Mode: RAS-Only, CAS-before-RAS (CBR), Hidden JEDEC standard pinout Single power supply: Integrated Silicon Solution data | | |
| 5 | IS41C16105-50K | 1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE IS41C16105 IS41LV16105
1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
FEATURES
• TTL compatible inputs and outputs; tristate I/O • Refresh Interval: — 1,024 cycles/16 ms • Refresh Mode: — RAS-Only, CAS-before-RAS (CBR), and Hidden • JEDEC standard pinout • Single power supply: — 5 Integrated Silicon Solution Inc data | | |
| 6 | IS41C16105-50KE | 1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE IS41C16105 IS41LV16105
1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
FEATURES
• TTL compatible inputs and outputs; tristate I/O • Refresh Interval: — 1,024 cycles/16 ms • Refresh Mode: — RAS-Only, CAS-before-RAS (CBR), and Hidden • JEDEC standard pinout • Single power supply: — 5 Integrated Silicon Solution Inc data | | |
| 7 | IS41C16105-50KI | 1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE IS41C16105 IS41LV16105
1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
FEATURES
• TTL compatible inputs and outputs; tristate I/O • Refresh Interval: — 1,024 cycles/16 ms • Refresh Mode: — RAS-Only, CAS-before-RAS (CBR), and Hidden • JEDEC standard pinout • Single power supply: — 5 Integrated Silicon Solution Inc data | |
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