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What is STB40N60M2?

This electronic component, produced by the manufacturer "STMicroelectronics", performs the same function as "N-CHANNEL MOSFET".


STB40N60M2 Datasheet PDF - STMicroelectronics

Part Number STB40N60M2
Description N-CHANNEL MOSFET
Manufacturers STMicroelectronics 
Logo STMicroelectronics Logo 


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STB40N60M2, STP40N60M2,
STW40N60M2
N-channel 600 V, 0.078 Ω typ., 34 A MDmesh II Plus™ low Qg
2
Power MOSFETs in D PAK, TO-220 and TO-247 packages
Datasheet production data
TAB
2
3
1
D2PAK
TAB
3
2
1
TO-220
3
2
1
TO-247
Features
Order codes VDS @ TJmax RDS(on) max ID
STB40N60M2
STP40N60M2
650 V
0.088 Ω 34 A
STW40N60M2
Extremely low gate charge
Lower RDS(on) x area vs previous generation
Low gate input resistance
100% avalanche tested
Zener-protected
Figure 1. Internal schematic diagram
' 7$%
Applications
Switching applications
LLC converters, resonant converters
Description
* 
6 
AM01476v1
These devices are N-channel Power MOSFETs
developed using a new generation of MDmesh™
technology: MDmesh II Plus™ low Qg. These
revolutionary Power MOSFETs associate a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. They are therefore suitable for the
most demanding high efficiency converters.
Order codes
STB40N60M2
STP40N60M2
STW40N60M2
Table 1. Device summary
Marking
Package
2
D PAK
40N60M2
TO-220
TO-247
Packaging
Tape and reel
Tube
May 2014
This is information on a product in full production.
DocID024932 Rev 3
1/21
www.st.com

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STB40N60M2 equivalent
STB40N60M2, STP40N60M2, STW40N60M2
Electrical characteristics
Symbol
Table 8. Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
(1)
ISDM
(2)
VSD
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 34 A, VGS = 0
- 34
A
- 136
A
- 1.6 V
trr Reverse recovery time
- 440
Qrr Reverse recovery charge
ISD = 34 A, di/dt = 100 A/μs
VDD = 60 V (see Figure 21)
-
8.2
IRRM Reverse recovery current
- 37
ns
μC
A
trr Reverse recovery time
- 568
ISD = 34 A, di/dt = 100 A/μs
Qrr
IRRM
Reverse recovery charge
Reverse recovery current
VDD = 60 V, Tj = 150 °C
(see Figure 21)
- 11.5
- 40.5
ns
μC
A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
DocID024932 Rev 3
5/21
21


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Featured Datasheets

Part NumberDescriptionMFRS
STB40N60M2The function is N-CHANNEL MOSFET. STMicroelectronicsSTMicroelectronics

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