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What is MBR2150TG?

This electronic component, produced by the manufacturer "American First Semiconductor", performs the same function as "(MBR220TG - MBR2200TG) Schottky Barrier Rectifier".


MBR2150TG Datasheet PDF - American First Semiconductor

Part Number MBR2150TG
Description (MBR220TG - MBR2200TG) Schottky Barrier Rectifier
Manufacturers American First Semiconductor 
Logo American First Semiconductor Logo 


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Schottky Barrier Rectifier
MBR220TG THRU MBR2200TG
Reverse Voltage: 20 to 200 Volts
Forward Current: 2.0 Ampere
Package outline
Features
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
Guard ring for overvoltage protection
Low power loss, high efficiency
High current capability, Low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
High temperature soldering guaranteed:
260 C/10 seconds at terminals
Component in accordance to RoHS 2002/95/EC and
WEEE 2002/96/EC
Mechanical data
Case: JEDEC DO-41 molded plastic body
Terminals: Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: 0.012 ounce, 0.33 gram
DO-41
0.107(2.7)
0.080(2.0)
DIA.
1.0(25.4)
MIN
0.205(5.20)
0.161(4.10)
0.034(0.85)
0.028(0.65)
DIA.
1.0(25.4)
MIN
Dimensions in inches and (millimeters)
Maximum Ratings And Electrical Characteristics
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, resistive or inductive load.
For capacitive load, derate by 20%.
Type Number
Symbols
MBR
220
TG
MBR
230
TG
MBR
240
TG
MBR
250
TG
MBR
260
TG
MBR
280
TG
MBR
2100
TG
MBR
2150
TG
MBR
2200
TG
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375"(9.5mm) lead length at TL=75 C
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
Maximum instantaneous forward voltage
at 2.0 A(Note 1 )
Maximum instantaneous reverse
current at rated DC blocking
voltage(Note 1)
TA =25 C
TA =100 C
Typical junction capacitance(Note 3)
VRRM
VRMS
VDC
I(AV)
IFSM
VF
IR
CJ
20 30 40 50 60 80 100 150 200
14 21 28 35 42 57 71 105 140
20 30 40 50 60 80 100 150 200
2.0
50.0
0.55
0.70
0.85
0.90 0.95
0.2
10
170
Typical thermal resistance(Note 2)
R JA
50
Operating junction temperature range
Storage temperature range
TJ
TSTG
-65 to+150
-65 to+150
Notes: 1.Pulse test: 300 s pulse width,1% duty cycle
2.Thermal resistance from junction to lead, and/or to ambient P.C.B. mounted with 0.375"(9.5mm) lead length
with 1.5 X1.5"(38X38mm)copper pads
3.Measured at 1.0MHz and reverse voltage of 4.0 volts
Units
Volts
Volts
Volts
Amps
Amps
Volts
mA
PF
C/W
C
C
@ 2010 Copyright By American First Semiconductor
Page 1/2


Part Details

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Featured Datasheets

Part NumberDescriptionMFRS
MBR2150TGThe function is (MBR220TG - MBR2200TG) Schottky Barrier Rectifier. American First SemiconductorAmerican First Semiconductor

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