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What is MBR0520G?

This electronic component, produced by the manufacturer "American First Semiconductor", performs the same function as "(MBR0520G - MBR0540G) 0.5A Surface Mount Schottky Barrier Rectifiers".


MBR0520G Datasheet PDF - American First Semiconductor

Part Number MBR0520G
Description (MBR0520G - MBR0540G) 0.5A Surface Mount Schottky Barrier Rectifiers
Manufacturers American First Semiconductor 
Logo American First Semiconductor Logo 


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Low VF Chip Schottky Barrier Rectifier
MBR0520G THRU MBR0504G
0.5A Surface Mount Schottky Barrier
Rectifiers - 20V- 40V
Features
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
optimize board space.
Tiny plastic SMD package.
Low power loss, high efficiency.
High current capability, low forward voltage drop.
High surge capability.
Guardring for overvoltage protection.
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
MIL-STD-19500/228
Suffix "-H" indicates Halogen free parts, ex. MBR0520G-H.
Package outline
SOD-123
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Mechanical data
Epoxy: UL94-V0 rated frame retardant
Case: Molded plastic, SOD-123
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: lndicated by cathode band
Mounting Position: Any
Weight: Approximated 0.011 gram
Dimensions in inches and (millimeters)
Maximum ratings (AT TA=25oC unless otherwise noted)
PARAMETER
CONDITIONS
Forward rectified current
See Fig.2
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
VR = VRRM TJ = 25OC
Junction to ambient
f=1MHz and applied 4V DC reverse voltage
Symbol
IO
IFSM
MIN.
TYP.
MAX. UNIT
0.5 A
15 A
IR
RθJA
CJ
TSTG
1.0 mA
42 OC/W
130 pF
-65 +175 OC
SYMBOLS
MBR0520G
MBR0530G
MBR0540G
V
*
RRM
1
(V)
20
30
40
V
*
RMS
2
(V)
14
21
28
V
*
R
3
(V)
20
30
40
V
*
F
4
(V)
0.38
0.40
0.40
Operating
temperature
TJ, (OC)
-55 to +100
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage@IF=0.5A
@ 2010 Copyright By American First Semiconductor
Page 1/2


Part Details

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