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Número de pieza | IPB13N03LB | |
Descripción | Power-Transistor | |
Fabricantes | Infineon Technologies | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IPB13N03LB (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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OptiMOS®2 Power-Transistor
Features
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1) for target applications
• N-channel - Logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Superior thermal resistance
• 175 °C operating temperature
• dv /dt rated
• Pb-free lead plating; RoHS compliant
Product Summary
V DS
R DS(on),max
ID
IPB13N03LB
30 V
12.5 mΩ
30 A
PG-TO263-3
Type
IPB13N03LB
Package
P-TO263-3
Marking
13N03LB
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C2)
T C=100 °C
Pulsed drain current
I D,pulse T C=25 °C3)
Avalanche energy, single pulse
E AS I D=30 A, R GS=25 Ω
Reverse diode dv /dt
dv /dt
I D=30 A, V DS=20 V,
di /dt =200 A/µs,
T j,max=175 °C
Gate source voltage4)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1) J-STD20 and JESD22
Rev. 0.93
page 1
Value
30
30
120
64
6
±20
52
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
2006-05-10
1 page www.DataSheet4U.com
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
100
IPB13N03LB
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
80
90
80 10 V
70
60
50
4.5 V
4.1 V
70
3.2V
3.8 V
60
3V
3.5 V
50
4.1 V
40
4.5 V
40
30
20
10
0
0
12
V DS [V]
3.8 V
3.5 V
3.2 V
3V
2.8 V
3
30
20
10
0
0
10 V
20 40 60 80 100
I D [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
100
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
70
90
60
80
70 50
60
40
50
40 30
30
20
10
0
0
175 °C
25 °C
1234
V GS [V]
5
20
10
0
0
20 40 60
I D [A]
80
Rev. 0.93
page 5
2006-05-10
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet IPB13N03LB.PDF ] |
Número de pieza | Descripción | Fabricantes |
IPB13N03LB | Power-Transistor | Infineon Technologies |
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