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What is STD36NH02L?

This electronic component, produced by the manufacturer "ST Microelectronics", performs the same function as "N-channel Power MOSFET".


STD36NH02L Datasheet PDF - ST Microelectronics

Part Number STD36NH02L
Description N-channel Power MOSFET
Manufacturers ST Microelectronics 
Logo ST Microelectronics Logo 


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STD36NH02L
N-channel 24V - 0.011- 30A - DPAK
STripFET™ III Power MOSFET
General features
Type
STD36NH02L
VDSS
24V
RDS(on)
<0.0145
ID
30A (1)
1. Guaranteed when external Rg=4.7and tf < tfmax
RDS(on) * Qg industry’s benchmark
Conduction losses reduced
Switching losses reduced
Description
This series of products utilizes the last advanced
design rules of ST’s proprietary STripFET™
technology. This is suitable for the most
demanding DC-DC converter application where
high efficiency is to be achieved.
Applications
Switching application
3
1
TO-252
Internal schematic diagram
Order codes
Part number
STD36NH02L
Marking
D36NH02L
Package
DPAK
Packaging
Tape & reel
April 2006
Rev 1
1/13
www.st.com
13

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STD36NH02L equivalent
STD36NH02L
Electrical characteristics
Table 5. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test condictions
VDD=10V, ID= 15A,
RG=4.7Ω, VGS=10V
(see Figure 13)
Min Typ. Max Unit
8 ns
70 ns
22 ns
15 ns
Table 6. Source drain diode
Symbol
Parameter
Test condictions
Min Typ. Max Unit
ISD Source-drain current
ISDM(1) Source-drain current (pulsed)
VSD(2) Forward on voltage
ISD = 15A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 30A,di/dt = 100A/µs,
VDD=15V, Tj=150°C
(see Figure 15)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
30 A
120 A
1.5 V
24 ns
16 nC
1.3 A
5/13


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Featured Datasheets

Part NumberDescriptionMFRS
STD36NH02LThe function is N-channel Power MOSFET. ST MicroelectronicsST Microelectronics

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