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What is FDP8441?

This electronic component, produced by the manufacturer "Fairchild Semiconductor", performs the same function as "N-Channel PowerTrench MOSFET".


FDP8441 Datasheet PDF - Fairchild Semiconductor

Part Number FDP8441
Description N-Channel PowerTrench MOSFET
Manufacturers Fairchild Semiconductor 
Logo Fairchild Semiconductor Logo 


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September 2006
FDP8441
N-Channel PowerTrench® MOSFET
40V, 80A, 2.7m
Features
„ Typ rDS(on) = 2.1mat VGS = 10V, ID = 80A
„ Typ Qg(10) = 215nC at VGS = 10V
„ Low Miller Charge
„ Low Qrr Body Diode
„ UIS Capability (Single Pulse and Repetitive Pulse)
„ Qualified to AEC Q101
„ RoHS Compliant
Applications
„ Automotive Engine Control
„ Powertrain Management
„ Solenoid and Motor Drivers
„ Electronic Steering
„ Integrated Starter / Alternator
„ Distributed Power Architectures and VRMs
„ Primary Switch for 12V Systems
AD FREE I
tm
©2006 Fairchild Semiconductor Corporation
FDP8441 Rev.A
1
www.fairchildsemi.com

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FDP8441 equivalent
Typical Characteristics
4000
1000
100
10us
100us
10
LIMITED
BY PACKAGE
1 OPERATION IN THIS SINGLE PULSE
AREA MAY BE
TJ = MAX RATED
LIMITED BY rDS(on)
0.1
1
TC = 25oC
10
1ms
10ms
DC
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
Figure 5. Forward Bias Safe Operating Area
500
100
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
STARTING TJ = 25oC
10
STARTING TJ = 150oC
1
0.01 0.1 1 10 100 1000 5000
tAV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
160
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
120 VDD = 5V
TJ = 175oC
80
TJ = 25oC
40
TJ = -55oC
0
2.0 2.5 3.0 3.5 4.0 4.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
5.0
160
VGS = 10V PULSE DURATION = 80µs
VGS = 5V
DUTY CYCLE = 0.5% MAX
120
VGS = 4.5V
80 VGS = 4V
40
VGS = 3.5V
0
01234
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
50
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
40
TJ = 25oC
30
TJ = 175oC
20
10
0
3 4 5 6 7 8 9 10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
1.8
PULSE DURATION = 80µs
1.6 DUTY CYCLE = 0.5% MAX
1.4
1.2
1.0
0.8
0.6
-80
ID = 80A
VGS = 10V
-40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE(oC)
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
FDP8441 Rev.A
5 www.fairchildsemi.com


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Part Details

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