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What is NTD32N06?

This electronic component, produced by the manufacturer "ON Semiconductor", performs the same function as "N-Channel DPAK".


NTD32N06 Datasheet PDF - ON Semiconductor

Part Number NTD32N06
Description N-Channel DPAK
Manufacturers ON Semiconductor 
Logo ON Semiconductor Logo 


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NTD32N06
Power MOSFET
32 Amps, 60 Volts, N−Channel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
Pb−Free Packages are Available
Smaller Package than MTB36N06V
Lower RDS(on)
Lower VDS(on)
Lower Total Gate Charge
Lower and Tighter VSD
Lower Diode Reverse Recovery Time
Lower Reverse Recovery Stored Charge
Typical Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 10 MW)
Gate−to−Source Voltage, Continuous
− Non−Repetitive (tpv10 ms)
Drain Current
− Continuous @ TA = 25°C
− Continuous @ TA = 100°C
− Single Pulse (tpv10 ms)
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C (Note 1)
Total Power Dissipation @ TA = 25°C (Note 2)
Operating and Storage Temperature Range
VDSS
VDGR
VGS
VGS
ID
ID
IDM
PD
TJ, Tstg
60
60
"20
"30
Vdc
Vdc
Vdc
32
22
90
93.75
0.625
2.88
1.5
−55 to
+175
Adc
Apk
W
W/°C
W
W
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C (Note 3)
(VDD = 50 Vdc, VGS = 10 Vdc, L = 1.0 mH,
IL(pk) = 25 A, VDS = 60 Vdc, RG = 25 W)
Thermal Resistance − Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8from case for 10 seconds
EAS
RqJC
RqJA
RqJA
TL
313 mJ
1.6 °C/W
52
100
260 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. When surface mounted to an FR4 board using 1pad size,
(Cu Area 1.127 in2).
2. When surface mounted to an FR4 board using minimum recommended pad
size, (Cu Area 0.412 in2).
3. Repetitive rating; pulse width limited by maximum junction temperature.
© Semiconductor Components Industries, LLC, 2004
August, 2004 − Rev. 3
1
http://onsemi.com
V(BR)DSS
60 V
RDS(on) TYP
26 mW
ID MAX
32 A
N−Channel
D
G
S
4
12
3
MARKING
DIAGRAMS
4
Drain
DPAK
CASE 369C
STYLE 2
1
Gate
2
Drain
3
Source
4
DPAK−3
CASE 369D
STYLE 2
4
Drain
1
2
3
12 3
Gate Drain Source
32N06
A
Y
WW
= Device Code
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Publication Order Number:
NTD32N06/D

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NTD32N06 equivalent
10
Normalized to RqJC at Steady State
NTD32N06
1
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t, TIME (s)
Figure 13. Thermal Response
10
Normalized to RqJA at Steady State,
1square Cu Pad, Cu Area 1.127 in2,
3 x 3 inch FR4 board
1
0.1
0.01
0.00001
0.0001
0.001
0.01 0.1
t, TIME (s)
1
Figure 14. Thermal Response
10 100 1000
http://onsemi.com
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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for NTD32N06 electronic component.


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Featured Datasheets

Part NumberDescriptionMFRS
NTD32N06The function is N-Channel DPAK. ON SemiconductorON Semiconductor
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NTD32N06LT4The function is Power MOSFET 32 Amps / 60 Volts / Logic Level(N-Channel DPAK). ONON

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