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What is MRF7S21170HR3?

This electronic component, produced by the manufacturer "Freescale Semiconductor", performs the same function as "RF Power Field Effect Transistors".


MRF7S21170HR3 Datasheet PDF - Freescale Semiconductor

Part Number MRF7S21170HR3
Description RF Power Field Effect Transistors
Manufacturers Freescale Semiconductor 
Logo Freescale Semiconductor Logo 


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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 2110 to
2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be
used in Class AB and Class C for PCN - PCS/cellular radio and WLL
applications.
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PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain — 16 dB
Drain Efficiency — 31%
Device Output Signal PAR — 6.1 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — - 37 dBc in 3.84 MHz Channel Bandwidth
Capable of Handling 5:1 VSWR, @ 32 Vdc, 2140 MHz, 170 Watts CW
Peak Tuned Output Power
Pout @ 1 dB Compression Point w 170 Watts CW
Features
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Series Equivalent Large - Signal Impedance Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
Designed for Digital Predistortion Error Correction Systems
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRF7S21170H
Rev. 3, 9/2006
MRF7S21170HR3
MRF7S21170HSR3
2110 - 2170 MHz, 50 W AVG., 28 V
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRF7S21170HR3
CASE 465C - 02, STYLE 1
NI - 880S
MRF7S21170HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain- Source Voltage
Gate- Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Table 2. Thermal Characteristics
VDSS
VGS
VDD
Tstg
TC
TJ
- 0.5, +65
- 6.0, +10
32, +0
- 65 to +150
150
200
Characteristic
Symbol
Value (1,2)
Thermal Resistance, Junction to Case
Case Temperature 80°C, 170 W CW
Case Temperature 73°C, 25 W CW
RθJC
0.31
0.36
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
Vdc
°C
°C
°C
Unit
°C/W
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF7S21170HR3 MRF7S21170HSR3
1

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MRF7S21170HR3 equivalent
TYPICAL CHARACTERISTICS
17
16 Gps
36
34
15
14 ηD
13
IRL
12
VDD = 28 Vdc, Pout = 50 W (Avg.), IDQ = 1400 mA
Single−Carrier W−CDMA, 3.84 MHz Channel
Bandwidth, PAR = 7.5 dB @ 0.01% Probability (CCDF)
32
30
28
0
−5
−10
11
PARC
10
−1 −15
−2 −20
9 −3
2060 2080 2100 2120 2140 2160 2180 2200 2220
f, FREQUENCY (MHz)
Figure 3. Output Peak - to - Average Ratio Compression (PARC)
Broadband Performance @ Pout = 50 Watts Avg.
−25
17 44
16
Gps
15
42
40
14 ηD
13
IRL
12
VDD = 28 Vdc, Pout = 84 W (Avg.), IDQ = 1400 mA
Single−Carrier W−CDMA, 3.84 MHz Channel
Bandwidth, PAR = 7.5 dB @ 0.01% Probability (CCDF)
38
36
−2
−5
−10
11 −3 −15
10
PARC
−4
9 −5
2060 2080 2100 2120 2140 2160 2180 2200 2220
f, FREQUENCY (MHz)
Figure 4. Output Peak - to - Average Ratio Compression (PARC)
Broadband Performance @ Pout = 84 Watts Avg.
−20
−25
18
IDQ = 2100 mA
17
1750 mA
16 1400 mA
15 1050 mA
14 700 mA
13
1
VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
10 100
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
400
−10
VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
−20
−30
IDQ = 700 mA
−40
2100 mA
1400 mA
−50 1750 mA
−60
1
1050 mA
10
100 400
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
RF Device Data
Freescale Semiconductor
MRF7S21170HR3 MRF7S21170HSR3
5


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Part Details

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Featured Datasheets

Part NumberDescriptionMFRS
MRF7S21170HR3The function is RF Power Field Effect Transistors. Freescale SemiconductorFreescale Semiconductor

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