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What is IRH7130?

This electronic component, produced by the manufacturer "International Rectifier", performs the same function as "RADIATION HARDENED POWER MOSFET".


IRH7130 Datasheet PDF - International Rectifier

Part Number IRH7130
Description RADIATION HARDENED POWER MOSFET
Manufacturers International Rectifier 
Logo International Rectifier Logo 


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PD - 90676D
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (T0-204AA/AE)
IRH7130
100V, N-CHANNEL
RAD Hard™ HEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
IRH7130
100K Rads (Si) 0.18
IRH3130
300K Rads (Si) 0.18
IRH4130
600K Rads (Si) 0.18
IRH8130
1000K Rads (Si) 0.18
ID
14A
14A
14A
14A
International Rectifier’s RADHard HEXFET® technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
TO-204AA
Features:
! Single Event Effect (SEE) Hardened
! Low RDS(on)
! Low Total Gate Charge
! Proton Tolerant
! Simple Drive Requirements
! Ease of Paralleling
! Hermetically Sealed
! Ceramic Package
! Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
Units
14
9.0 A
56
75 W
0.60
W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
±20
Single Pulse Avalanche Energy
160
Avalanche Current
14
Repetitive Avalanche Energy
7.5
Peak Diode Recovery dv/dt
5.5
Operating Junction
-55 to 150
Storage Temperature Range
Lead Temperature
300 ( 0.063 in.(1.6mm) from case for 10s)
Weight
11.5 (Typical )
V
mJ
A
mJ
V/ns
oC
g
For footnotes refer to the last page
www.irf.com
1
8/10/01

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IRH7130 equivalent
Pores-tI-rIrraaddiiaattiioonn
IRH7130
Fig 5. Typical Zero Gate Voltage Drain
Current Vs. Total Dose Exposure
Fig 6. Typical On-State Resistance Vs.
Neutron Fluence Level
Fig 8a. Gate Stress of
VGSS Equals 12 Volts During
Radiation
Fig 7. Typical Transient Response
of Rad Hard HEXFET During 1x1012
Rad (Si)/Sec Exposure
www.irf.com
Fig 8b. VDSS Stress Equals
80% of BVDSS During Radiation
5


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IRH7130 electronic component.


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Featured Datasheets

Part NumberDescriptionMFRS
IRH7130The function is RADIATION HARDENED POWER MOSFET. International RectifierInternational Rectifier

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