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PDF MRF240 Data sheet ( Hoja de datos )
| Número de pieza | MRF240 | |
| Descripción | RF POWER TRANSISTORS NPN SILICON | |
| Fabricantes | Motorola Semiconductors | |
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Hay una vista previa y un enlace de descarga de MRF240 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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www.DataShMeetO4UT.cOomROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF240/D
The RF Line
NPN Silicon
RF Power Transistors
. . . designed for 13.6 volt VHF large–signal class C and class AB linear power
amplifier applications in commercial and industrial equipment.
• High Common Emitter Power Gain
• Specified 13.6 V, 160 MHz Performance:
Output Power = 40 Watts
Power Gain = 9.0 dB Min
Efficiency = 55% Min
• Load Mismatch Capability at Rated Voltage and RF Drive
• Silicon Nitride Passivated
• Low Intermodulation Distortion, d3 = – 30 dB Typ
MRF240
40 W, 145 – 175 MHz
RF POWER
TRANSISTORS
NPN SILICON
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TC = 25°C (1)
Derate above 25°C
Storage Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
Tstg
Value
16
36
4.0
8.0
100
0.57
– 65 to +150
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
CASE 145A–09, STYLE 1
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case (2)
RθJC 1.75 °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 20 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage
(IC = 20 mAdc, VBE = 0)
V(BR)CEO
16
—
— Vdc
V(BR)CES
36
—
— Vdc
Emitter–Base Breakdown Voltage
(IE = 5.0 mAdc, IC = 0)
V(BR)EBO
4.0
—
— Vdc
Collector Cutoff Current
(VCB = 15 Vdc, IE = 0)
ON CHARACTERISTICS
ICBO
—
—
10 mAdc
DC Current Gain
(IC = 4.0 Adc, VCE = 5.0 Vdc)
hFE 10 70 150 —
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 12.5 Vdc, IE = 0, f = 1.0 MHz)
Cob — 90 125 pF
NOTES:
(continued)
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
©MMOotoTrOolaR, OIncL.A19R94F DEVICE DATA
MRF240
1
1 page  
www.DataSheet4U.com
PACKAGE DIMENSIONS
T
C EP
8–32UNC–2A
WRENCH FLAT
A
L
J
S SEATING
PLANE
U
B2
3
4
1
R
D
M
K
CASE 145A–09
ISSUE M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
DIM MIN MAX
A 0.370 0.385
B 0.320 0.330
C 0.670 0.790
D 0.215 0.235
E 0.070 –––
J 0.003 0.007
K 0.490 –––
L 0.055 0.070
M 45_NOM
P ––– 0.050
R 0.299 0.307
S 0.158 0.178
T 0.083 0.100
U 0.098 0.132
MILLIMETERS
MIN MAX
9.40 9.78
8.13 8.38
17.02 20.07
5.46 5.97
1.78 –––
0.08 0.18
12.45 –––
1.40 1.78
45_ NOM
––– 1.27
7.59 7.80
4.01 4.52
2.11 2.54
2.49 3.35
STYLE 1:
PIN 1. EMITTER
2. BASE
3. EMITTER
4. COLLECTOR
MOTOROLA RF DEVICE DATA
MRF240
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MRF240.PDF ] | |
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