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What is STS25NH3LL?

This electronic component, produced by the manufacturer "ST Microelectronics", performs the same function as "N-CHANNEL POWER MOSFET".


STS25NH3LL Datasheet PDF - ST Microelectronics

Part Number STS25NH3LL
Description N-CHANNEL POWER MOSFET
Manufacturers ST Microelectronics 
Logo ST Microelectronics Logo 


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STS25NH3LL
N-CHANNEL 30V - 0.0032 - 25A SO-8
STripFET™ III MOSFET FOR DC-DC CONVERSION
TYPE
VDSS
RDS(on)
ID
STS25NH3LL
30 V <0.0035 25 A
s TYPICAL RDS(on) = 0.0032 @ 10V
s OPTIMAL RDS(on) x Qg TRADE-OFF @ 4.5V
s CONDUCTION LOSSES REDUCED
s SWITCHING LOSSES REDUCED
DESCRIPTION
The STS25NH3LL utilizes the latest advanced design
rules of ST's propetary STripFET™ technology. This
novel 0.6µ process coupled to unique metalization
techniques re alizes the most advanced low voltage
MOSFET in SO-8 ever produced. It is therefore suit able
for the most demanding DC-DC converter applications
where high efficiency is to be achived at high output
current.
APPLICATIONS
s DC-DC CONVERTERS FOR TELECOM AND
NOTEBOOK CPU CORE
s SYNCHRONOUS RECTIFIER
SO-8
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM(•) Drain Current (pulsed)
EAS (1) Single Pulse Avalanche Energy
Ptot Total Dissipation at TC = 25°C
(•) Pulse width limited by safe operating area.
September 2003
.
Value
30
30
± 18
25
18
100
200
3.2
(1) Starting Tj = 25 oC ID = 12.5A
VDD = 30V
Unit
V
V
V
A
A
A
mJ
W
1/8

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STS25NH3LL equivalent
Normalized Gate Threshold Voltage vs Temperature
STS25NH3LL
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage vs Temperature.
..
5/8


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Part Details

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Featured Datasheets

Part NumberDescriptionMFRS
STS25NH3LLThe function is N-CHANNEL POWER MOSFET. ST MicroelectronicsST Microelectronics

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