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What is BC327-25?

This electronic component, produced by the manufacturer "NXP Semiconductors", performs the same function as "PNP General Purpose Transistors".


BC327-25 Datasheet PDF - NXP Semiconductors

Part Number BC327-25
Description PNP General Purpose Transistors
Manufacturers NXP Semiconductors 
Logo NXP Semiconductors Logo 


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BC807; BC807W; BC327
45 V, 500 mA PNP general-purpose transistors
Rev. 05 — 21 February 2005
Product data sheet
1. Product profile
1.1 General description
PNP general-purpose transistors.
Table 1: Product overview
Type number
Package
Philips
BC807
SOT23
BC807W
SOT323
BC327 [1]
SOT54 (TO-92)
JEITA
-
SC-70
SC-43A
[1] Also available in SOT54A and SOT54 variant packages (see Section 2).
NPN complement
BC817
BC817W
BC337
1.2 Features
s High current
s Low voltage
1.3 Applications
s General-purpose switching and amplification
1.4 Quick reference data
Table 2:
Symbol
VCEO
IC
ICM
hFE
Quick reference data
Parameter
Conditions
collector-emitter voltage
collector current (DC)
open base;
IC = 10 mA
peak collector current
DC current gain
BC807; BC807W; BC327
IC = 100 mA;
VCE = 1 V
BC807-16; BC807-16W; BC327-16
BC807-25; BC807-25W; BC327-25
BC807-40; BC807-40W; BC327-40
[1] Pulse test: tp 300 µs; δ ≤ 0.02.
Min Typ Max Unit
- - 45 V
- - 500 mA
- - 1 A
[1]
100 -
100 -
160 -
250 -
600
250
400
600

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BC327-25 equivalent
Philips Semiconductors
BC807; BC807W; BC327
45 V, 500 mA PNP general-purpose transistors
7. Characteristics
Table 8: Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
ICBO collector-base cut-off current
IEBO
hFE
hFE
VCEsat
VBE
Cc
fT
emitter-base cut-off current
DC current gain
BC807; BC807W; BC327
BC807-16; BC807-16W;
BC327-16
BC807-25; BC807-25W;
BC327-25
BC807-40; BC807-40W;
BC327-40
DC current gain
collector-emitter saturation
voltage
base-emitter voltage
collector capacitance
transition frequency
Conditions
IE = 0 A; VCB = 20 V
IE = 0 A; VCB = 20 V;
Tj = 150 °C
IC = 0 A; VEB = 5 V
IC = 100 mA; VCE = 1 V
IC = 500 mA; VCE = 1 V
IC = 500 mA; IB = 50 mA
IC = 500 mA; VCE = 1 V
IE = ie = 0 A; VCB = 10 V;
f = 1 MHz
IC = 10 mA; VCE = 5 V;
f = 100 MHz
[1] Pulse test: tp 300 µs; δ ≤ 0.02.
[2] VBE decreases by approximately 2 mV/K with increasing temperature.
Min Typ Max
Unit
-
-
100
nA
- - 5 µA
-
[1]
100
100
-
-
-
100
nA
600
250
160 -
400
250 -
600
[1] 40
[1] -
-
-
-
700
mV
[2] - - 1.2 V
- 5-
pF
80 -
-
MHz
9397 750 14023
Product data sheet
Rev. 05 — 21 February 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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