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PDF ASI10601 Data sheet ( Hoja de datos )
| Número de pieza | ASI10601 | |
| Descripción | NPN SILICON RF POWER TRANSISTOR | |
| Fabricantes | Advanced Semiconductor | |
| Logotipo |  |
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HF8-28S
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HF8-28S is Designed for
FEATURES:
• PG = 21 dB min. at 8 W/30 MHz
• IMD3 = -30 dBc max. at 8 W(PEP)
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 1.0 A
VCBO
65 V
VCEO
35 V
VCES
65 V
VEBO
PDISS
TJ
T STG
θ JC
4.0 V
13.0 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
13.5 OC/W
PACKAGE STYLE .380 4L STUD
.112x45°
A
B
E
ØC
C
B
E
D
#8-32 UNC-2A
HI
J
G
F
E
DIM
MINIMUM
inches / mm
A .220 / 5.59
B .980 / 24.89
C .370 / 9.40
D .004 / 0.10
E .320 / 8.13
F .100 / 2.54
G .450 / 11.43
H .090 / 2.29
I .155 / 3.94
J
MAXIMUM
inches / mm
.230 / 5.84
.385 / 9.78
.007 / 0.18
.330 / 8.38
.130 / 3.30
.490 / 12.45
.100 / 2.54
.175 / 4.45
.750 / 19.05
ORDER CODE: ASI10601
CHARACTERISTICS TC = 25 OC
SYMBOL
NONETEST CONDITIONS
BVCBO
IC = 200 mA
BVCES
IC = 200 mA
BVCEO
IC = 200 mA
BVEBO
IE = 10 mA
ICBO
VCB = 30 V
hFE VCE = 5.0 V
IC = 200 mA
MINIMUM TYPICAL MAXIMUM
65
65
35
4.0
1.0
5.0 ---
UNITS
V
V
V
V
mA
---
COB VCB = 30 V
f = 1.0 MHz
15 pF
GP VCC = 28 V
PIN = 1.0 W
f = 150 MHz
10
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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| PDF Descargar | [ Datasheet ASI10601.PDF ] | |
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