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Datasheet BSS84 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | BSS84 | P-Channel MOSFET JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETs
BSS84 P-CHANNEL MOSFET
V(BR)DSS
RDS(on)MAX
ID
-50 V
8Ω@-10V 10Ω@ -5V
-0.13A
DESCRIPTION These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use | JCET | mosfet |
2 | BSS84 | P-CHANNEL MOSFET BSS84
Rev.D Nov.-2015
DATA SHEET
描述 / Descriptions SOT-23 塑封封装 P 沟道 MOS 场效应管。P-CHANNEL MOSFET in a SOT-23 Plastic Package.
特征 / Features
低开启电压,C-MOS 和 TTL 等电路的直接接口,开关速度快。 Low threshold voltage, Direct interface to C-MOS, T | BLUE ROCKET ELECTRONICS | mosfet |
3 | BSS84 | P-Channel 20-V (D-S) MOSFET BSS84
P-Channel 20-V (D-S) MOSFET
Description These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered | Bruckewell | mosfet |
4 | BSS84 | Small Signal MOSFET BSS84
Small Signal MOSFET P-Channel
3 DRAIN
Features:
*Low On-Resistance : 10 *Low Input Capacitance: 30PF *Low Out put Capacitance : 10PF *Low Threshole : 2.0V *Fast Switching Speed : 2.5ns
1 GATE
Application:
* DC to DC Converter * Cellular & PCMCIA Card * Cordless Telephone * Power Managemen | WEITRON | mosfet |
5 | BSS84 | P-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS
DATA SHEET
BSS84 P-channel enhancement mode vertical D-MOS transistor
Product specification Supersedes data of 1995 Apr 07 File under Discrete Semiconductors, SC13b 1997 Jun 18
Philips Semiconductors
Product specification
P-channel enhancement mode vertical D-MOS trans | NXP Semiconductors | transistor |
BSS Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | BSS100 | SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level) BSS 100
SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level
• VGS(th) = 0.8...2.0V
Pin 1 S Type BSS 100 Type BSS 100 BSS 100 BSS 100 Pin 2 G Marking SS 100 Pin 3 D
VDS
100 V
ID
0.22 A
RDS(on)
6Ω
Package TO-92
Ordering Code Q62702-S499 Q62702-S007 Q62702-S2 Siemens Semiconductor Group transistor | | |
2 | BSS100 | N-Channel Logic Level Enhancement Mode Field Effect Transistor September 1996
BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density proces Fairchild Semiconductor transistor | | |
3 | BSS101 | SIPMOS Small-Signal Transistor BSS 101
SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level
• VGS(th) = 0.8...2.0V
Pin 1 S Type BSS 101 Type BSS 101 BSS 101
Pin 2 G Marking SS 101
Pin 3 D
VDS
240 V
ID
0.13 A
RDS(on)
16 Ω
Package TO-92
Ordering Code Q62702-S493 Q62702-S636
Tape and Re Siemens Semiconductor transistor | | |
4 | BSS110 | P-Channel Enhancement Mode Field Effect Transistor May 1999
BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor
General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is designed to minimize on-st Fairchild Semiconductor transistor | | |
5 | BSS110 | SIPMOS Small-Signal Transistor BSS 110
SIPMOS ® Small-Signal Transistor • P channel • Enhancement mode • Logic Level
• VGS(th) = -0.8...-2.0 V
Pin 1 S Type BSS 110 Type BSS 110 BSS 110 BSS 110 Pin 2 G Marking SS 110 Pin 3 D
VDS
-50 V
ID
-0.17 A
RDS(on)
10 Ω
Package TO-92
Ordering Code Q62702-S500 Q62702-S278 Q67 Siemens Semiconductor transistor | | |
6 | BSS110 | P-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS
DATA SHEET
BSS110 P-channel enhancement mode vertical D-MOS transistor
Product specification File under Discrete Semiconductors, SC07 1995 Apr 07
Philips Semiconductors
Philips Semiconductors
Product specification
P-channel enhancement mode vertical D-MOS transistor
F NXP Semiconductors transistor | | |
7 | BSS119 | SIPMOS Small-Signal Transistor (N channel Enhancement mode) BSS 119
SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • VGS(th) = 1.6 ...2.6 V
Pin 1 G
Pin 2 S
Pin 3 D
Type BSS 119 Type BSS 119
VDS
100 V
ID
0.17 A
RDS(on)
6Ω
Package SOT-23
Marking sSH
Ordering Code Q67000-S007
Tape and Reel Information E6327
Maximum Ratings Siemens Semiconductor Group transistor | |
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