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Datasheet BC337-16 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1BC337-16NPN Transistor

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC337,-16,-25,-40 TRANSISTOR (NPN) BC338, -16,-25,-40 TO-92 FEATURES Power dissipation 1. COLLECTOR PCM: 0.625 W (Tamb=25℃) 2. BASE Collector current ICM: 0.8 A Collector-base voltage VCBO: BC337 5
JCET
JCET		transistor
2BC337-16NPN Transistor

Small Signal Product BC337-16/25/40 thru BC338-16/25/40 Taiwan Semiconductor NPN Transistor FEATURES - For switching and AF amplifier applications - These types are subdivided into three groups -16, -25 and -40, according to their current gain - Moisture sensitivity level 1 - Driver transistor -
Taiwan Semiconductor
Taiwan Semiconductor		transistor
3BC337-16NPN General Purpose Amplifier

BC337-16 / BC337-25 BC337-16 BC337-25 Discrete POWER & Signal Technologies E BC TO-92 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics. Absol
Fairchild Semiconductor
Fairchild Semiconductor		amplifier
4BC337-16NPN Plastic-Encapsulate Transistors

MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features x Capable of 0.625Watts of Power Dissipation. x Collector-current 0.8A x Collector-base Voltage :VCBO=50V(BC337) , VCBO=30V(BC338) x Ca
MCC
MCC		transistor
5BC337-16NPN Transistor

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC337,-16,-25,-40 TRANSISTOR (NPN) BC338, -16,-25,-40 TO-92 FEATURES Power dissipation 1. COLLECTOR PCM: 0.625 W (Tamb=25℃) 2. BASE Collector current ICM: 0.8 A Collector-base voltage VCBO: BC337 5
JIANGSU CHANGJIANG
JIANGSU CHANGJIANG		transistor


BC3 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1BC3.5Diode, Rectifier

American Microsemiconductor
American Microsemiconductor		diode
2BC300NPN EPITAXIAL PLANAR SILICON TRANSISTORS

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTORS BC300, BC301, BC302 TO-39 Metal Can Package NPN SILICON LOW -AND- MEDIUM POWER TRANSISTORS. ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTIO
CDIL
CDIL		transistor
3BC300PNP SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES

Micro Electronics
Micro Electronics		amplifier
4BC301NPN EPITAXIAL PLANAR SILICON TRANSISTORS

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTORS BC300, BC301, BC302 TO-39 Metal Can Package NPN SILICON LOW -AND- MEDIUM POWER TRANSISTORS. ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTIO
CDIL
CDIL		transistor
5BC301PNP SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES

Micro Electronics
Micro Electronics		amplifier
6BC302NPN EPITAXIAL PLANAR SILICON TRANSISTORS

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTORS BC300, BC301, BC302 TO-39 Metal Can Package NPN SILICON LOW -AND- MEDIUM POWER TRANSISTORS. ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTIO
CDIL
CDIL		transistor
7BC302Bipolar NPN Device

BC302 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device. 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. VCEO = 45V 5.08 (0.200) typ. IC
Seme LAB
Seme LAB		data



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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