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PDF MPF1010 Data sheet ( Hoja de datos )
| Número de pieza | MPF1010 | |
| Descripción | TMOS SWITCHING | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MPF1010
CASE 29-03, STYLE 22
TO-92 (TO-226AE)
TMOS
SWITCHING
N-CHANNEL - ENHANCEMENT
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous(1
Pulsed(2)
@TaTotal Device Dissipation
= 25°C
Derate above 25°C
VDSS
vgs
id
'DM
pd
100
±30
500
1000
1
8
Vdc
Vdc
mAdc
Watts
mW/°C
Operating and Storage Temperature
Range
Tj, T stq -55 to +150
°C
Thermal Resistance Junction to Ambient
6UA
125 °C/W
(1)The Power Dissipation of the package may result in a lower continuous drain
current.
(2) Pulse Width < 300 us. Duty Cycle ^ 2%.
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted )
Characteristic
Symbol
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
(Vgs = o, di = 100 uA)
Zero Gate Voltage Drain Current
(v D s = 60 v, vqs = o>
Gate-Body Leakage Current
(Vqs = 10 vdc, v D s = oj
ON CHARACTERISTICS*
V(BR)DSS
IDSS
IGSS
Gate Threshold Voltage
(ID = 15 mA, VdS = VGS)
Drain-Source On-Voltage
(ID = 120 mA, VQS = 5 V)
(ID = 20 mA, Vgs = 3.5 V)
On State Drain Current
(v D s = 25 V, vgs = iov>
(v D s = 25 v, vG s = s v)
Forward Transconductance
(V D S = 15 V, Id = 0.5 A)
DYNAMIC CHARACTERISTICS
VGS(th)
VDS(on)
'D(on)
9fs
Input Capacitance
(vds = 25 v, vgs = 0, f = 1.0 mhz)
Output Capacitance
(Vds
=
25
v,
vgs
=
0,
f
=
1.0
mh Z
)
Reverse Transfer Capacitance
(vds = 25 v, vgs = 0, f = 1.0 mhz)
SWITCHING CHARACTERISTICS*
Ciss
Coss
Crss
Turn-On Time
See Figure 1
Turn-Off Time
See Figure 1
' Pulse Test: Pulse Width == 300 us. Duty Cycle s 2%.
ton
toff
Min
100
—
0.3
-
500
250
100
—
—
Typ
—
0.01
—
-
700
300
60
49
13
7
7
Max
—
10
10
Unit
|
Vdc
uAdc
nAdc
2.5
1.2
0.16
—
Vdc
Vdc
mA
mmhos
pF
70
pF
60
pF
18
ns
15
ns
15
6-176
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MPF1010.PDF ] | |
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