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Datasheet PA410BT Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | PA410BT | N-Channel Field Effect Transistor NIKO-SEM
N-Channel Enhancement Mode
PA410BT
Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
140mΩ
ID 11A
D
G S
1. GATE 2. DRAIN 3. SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Dr |  NIKO-SEM | transistor |
| 2 | PA410BT | N-Channel Enhancement Mode MOSFET PA410BT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
140mΩ @VGS = 10V
ID 11A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±20
Continuous |  UNIKC | mosfet |
| 3 | PA410BTF | N-Channel Field Effect Transistor NIKO-SEM
N-Channel Enhancement Mode
PA410BTF
Field Effect Transistor
TO-220F
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
140mΩ
ID 10A
D G
1. GATE 2. DRAIN 3. SOURCE
1 23
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
S | NIKO-SEM | transistor |
| 4 | PA410BTF | N-Channel Enhancement Mode MOSFET PA410BTF
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
140mΩ @VGS = 10V
ID 10A
TO-220F
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±20
Continuou | UNIKC | mosfet |
PA4 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | PA40 | Diode, Rectifier American Microsemiconductor diode | | |
| 2 | PA40 | Single - Phase Full Wave Bridges Heat Sink and Chassis Mounting Electronic Devices data | | |
| 3 | PA40 | High Voltage Power Operational Amplifier HIGH VOLTAGE POWER OPERATIONAL AMPLIFIER
PA40
M I C R O T E C H N O L O G Y
HTTP://WWW.APEXMICROTECH.COM
(800) 546-APEX
(800) 546-2739
FEATURES
• • • • • • MONOLITHIC MOS TECHNOLOGY LOW COST HIGH VOLTAGE OPERATION—250V LOW QUIESCENT CURRENT—2mA NO SECOND BREAKDOWN HIGH OUTPUT CU  Apex Microtechnology amplifier | | |
| 4 | PA406EM | P-Channel Enhancement Mode MOSFET PA406EM
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-60V
140mΩ @VGS = -10V
ID -2A
SOT-23
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -60
Gate-Source Voltage
VGS ±20
Continuous UNIKC mosfet | | |
| 5 | PA406EM | P-Channel Field Effect Transistor NIKO-SEM
P-Channel Enhancement Mode
PA406EM
Mode Field Effect Transistor
SOT-23
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-60 140mΩ
ID -2A
D G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate NIKO-SEM transistor | | |
| 6 | PA41 | (PA41 / PA42) HIGH VOLTAGE POWER OPERATIONAL AMPLIFIERS
HIGH VOLTAGE POWER OPERATIONAL AMPLIFIERS
PA41/PA42 • PA41A/PA42A
M I C R O T E C H N O L O G Y
HTTP://WWW.APEXMICROTECH.COM
(800) 546-APEX
(800) 546-2739
FEATURES
• • • • • • • MONOLITHIC MOS TECHNOLOGY LOW COST HIGH VOLTAGE OPERATION—350V LOW QUIESCENT C Apex Microtechnology amplifier | | |
| 7 | PA410BD | N-Channel Enhancement Mode MOSFET PA410BD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
140mΩ @VGS = 10V
ID 10A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±20
Continuous UNIKC mosfet | |
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