|
|
Datasheet FCB110N65F Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | FCB110N65F | MOSFET, Transistor FCB110N65F — N-Channel SuperFET® II FRFET® MOSFET
August 2016
FCB110N65F
N-Channel SuperFET® II FRFET® MOSFET
650 V, 35 A, 110 mΩ
Features
• 700 V @TJ = 150°C • Typ. RDS(on) = 96 mΩ (Typ.) • Ultra Low Gate Charge (Typ. Qg = 98 nC) • Low Effective Output Capacitance (Typ. Coss(eff |  Fairchild Semiconductor | mosfet |
FCB Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | FCB-MA130 | USB 3.0 Interface ®
USB 3.0 Interface Sony FCB-MA130
SONY FCB-MA130 to USB 3.0 Interface
1080p 30fps Video Streaming
Still image capture
Power over USB
One cable solution
I2C Camera Control via USB Miniature Size Register Access Simple GUI
Markets and Applications Machine Vision: Space Restricted Applications Sec  InterTest data | | |
| 2 | FCB-MA130 | 13 Mega Pixels Digital Camera Module 13 Mega Pixels Digital Camera Module - Specification
FCB-MA130
Version 1.0 4th Mar, 2013
1 Cover Page and Summary of Specification
Progressive scan CMOS image sensor
Number of total pixels
4216 (H) x 3160 (V)
Image sensor
Image size
Diagonal 7.33mm (Type 1/2.45)
Color filter
Primary color  Sony data | | |
| 3 | FCB110N65F | MOSFET, Transistor FCB110N65F — N-Channel SuperFET® II FRFET® MOSFET
August 2016
FCB110N65F
N-Channel SuperFET® II FRFET® MOSFET
650 V, 35 A, 110 mΩ
Features
• 700 V @TJ = 150°C • Typ. RDS(on) = 96 mΩ (Typ.) • Ultra Low Gate Charge (Typ. Qg = 98 nC) • Low Effective Output Capacitance (Typ. Coss(eff Fairchild Semiconductor mosfet | | |
| 4 | FCB11N60 | N-Channel MOSFET FCB11N60 600V N-Channel MOSFET
SuperFET
FCB11N60
600V N-Channel MOSFET Features
• 650V @TJ = 150°C • Typ. RDS(on) = 0.32Ω • Ultra low gate charge (typ. Qg = 40nC) • Low effective output capacitance (typ. Coss.eff = 95pF) • 100% avalanche tested
TM
Description
SuperFETTM is, Farichild Fairchild Semiconductor mosfet | | |
| 5 | FCB11N60F | N-Channel MOSFET FCB11N60F 600V N-Channel MOSFET
SuperFET
FCB11N60F
600V N-Channel MOSFET
Features
• 650V @TJ = 150°C • Typ. RDS(on) = 0.32Ω • Fast Recovery Type ( trr = 120ns ) • Ultra low gate charge (typ. Qg = 40nC) • Low effective output capacitance (typ. Coss.eff = 95pF) • 100% avalanche tested
Fairchild Semiconductor mosfet | | |
| 6 | FCB20N60 | N-Channel MOSFET FCB20N60 — N-Channel SuperFET® MOSFET
FCB20N60
N-Channel SuperFET® MOSFET
600 V, 20 A, 190 mΩ
Features
• 650 V @TJ = 150 °C • Typ. RDS(on) = 150 m • Ultra Low Gate Charge (Typ. Qg = 75 nC) • Low Effective Output Capacitance (Typ. Coss.eff = 165 pF) • 100% Avalanche Tested
• R Fairchild Semiconductor mosfet | | |
| 7 | FCB20N60F | N-Channel MOSFET FCB20N60F 600V NCHANNEL FRFET
December 2006
SuperFET
FCB20N60F
600V NCHANNEL FRFET Feat ur es
• 650V @ TJ = 150° C • Ty p.Rds ( on) =0. 15: • Fas t Recov eryTy pe (trr = 160ns) • Ultra low gate charge ( ty p.Qg=75nC) • Low ef f ectiv e output capacitance ( ty p.Cos s . ef f =165pF) • Fairchild Semiconductor mosfet | |
| Esta página es del resultado de búsqueda del FCB110N65F. Si pulsa el resultado de búsqueda de FCB110N65F se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |