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PDF BSF083N03LQG Data sheet ( Hoja de datos )
| Número de pieza | BSF083N03LQG | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon | |
| Logotipo |  |
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BSF083N03LQ G
OptiMOSTM2 Power-MOSFET
Features
• Optimized for high switching frequency DC/DC converter
• Very low on-resistance R DS(on)
• Excellent gate charge x R DS(on) product (FOM)
Product Summary
V DS
R DS(on),max
ID
30
8.3
53
• Low profile (<0.7 mm)
• Double-sided cooling
• Low parasitic inductance
MG-WDSON-2
• 100% avalanche tested
• Qualified for consumer level application
• Compatible with DirectFET® package SQ footprint and outline 1)
• Pb-free plating; RoHS compliant
V
mΩ
A
Type
BSF083N03LQ G
Package
MG-WDSON-2
Outline
SQ
Marking
6003
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D V GS=10 V, T C=25 °C
53 A
V GS=10 V, T C=100 °C
33
V GS=10 V, T A=25 °C,
R thJA=58 K/W2)
13
Pulsed drain current3)
Avalanche current, single pulse4)
I D,pulse
I AS
T C=25 °C
T C=25 °C
212
50
Avalanche energy, single pulse
E AS I D=38 A, R GS=25 Ω
30 mJ
Gate source voltage
V GS
±20 V
1) CanPAKTM uses DirectFET ® technology licensed from International Rectifier Corporation. DirectFET® is a registered
trademark of International Rectifier Corporation.
Rev. 2.0
page 1
2009-05-11
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
120
10 V
5V
80
40
0
012
V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
100
BSF083N03LQ G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
20
4.5 V
16
3.5 V
4V
12
4V
8
3.5 V
3.2 V
3V
2.8 V
3
4
0
0 10 20 30
I D [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
4.5 V
5V
10 V
40 50
150
80
100
60
40
20
0
0
Rev. 2.0
150 °C
25 °C
1234
V GS [V]
50
0
50
page 5
40 80 120
I D [A]
160
2009-05-11
5 Page 
BSF083N03LQ G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.0
page 11
2009-05-11
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet BSF083N03LQG.PDF ] | |
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