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Datasheet D45VH Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | D45VH | Silicon PNP Power Transistors INCHANGE Semiconductor
isc Silicon PNP Power Transistors
DESCRIPTION ·Low Saturation Voltage ·Fast Switching Speed ·Complement to Type D44VH Series
APPLICATIONS ·Designed for high-speed switching applications, such as
switching regulators and high frequency inverters. They are also well-suited | Inchange Semiconductor | transistor |
2 | D45VH | Silicon PNP Power Transistors <~>£,ml-(Lonauctoi
20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A.
, Line,
TELEPHONE: (973) 376-2922 (212)227-6005
FAX: (973) 376-8960
Silicon PNP Power Transistors
DESCRIPTION • Low Saturation Voltage • Fast Switching Speed • Complement to Type D44VH Series
APPLICATIONS • Designed f | New Jersey Semi-Conductor | transistor |
3 | D45VH | COMPLEMENTARY SILICON POWER TRANSISTORS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Complementary Silicon Power Transistors
These complementary silicon power transistors are designed for high–speed switching applications, such as switching regulators and high frequency inverters. The devices are also well–suited for drivers for high power s | Motorola Semiconductors | transistor |
4 | D45VH | COMPLEMENTARY SILICON POWER TRANSISTORS ON Semiconductort
Complementary Silicon Power Transistors
These complementary silicon power transistors are designed for high–speed switching applications, such as switching regulators and high frequency inverters. The devices are also well–suited for drivers for high power switching circuits. | ON Semiconductor | transistor |
5 | D45VH1 | Silicon PNP Power Transistors INCHANGE Semiconductor
isc Silicon PNP Power Transistors
DESCRIPTION ·Low Saturation Voltage ·Fast Switching Speed ·Complement to Type D44VH Series
APPLICATIONS ·Designed for high-speed switching applications, such as
switching regulators and high frequency inverters. They are also well-suited | Inchange Semiconductor | transistor |
D45 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | D4503B | Hex 2 State Buffer ETC buffer | | |
2 | D45128163G5 | UPD45128163G5
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD45128441, 45128841, 45128163
128M-bit Synchronous DRAM 4-bank, LVTTL
Description
The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 � NEC data | | |
3 | D45128441G5 | UPD45128441G5 DATA SHEET
MOS INTEGRATED CIRCUIT
µPD45128441, 45128841, 45128163
128M-bit Synchronous DRAM 4-bank, LVTTL
Description
The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 � NEC data | | |
4 | D45128841G5 | UPD45128841G5
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD45128441, 45128841, 45128163
128M-bit Synchronous DRAM 4-bank, LVTTL
Description
The µPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 � NEC data | | |
5 | D4515 | Low-frequency amplification shell rated bipolar transistors R
D
2004.01
1/5
2004.01
2/5
(mA)
Ic (A)
10
500mA
450mA 400mA
350mA 300mA 250mA
200mA
5 150mA
100mA
50mA
2
01
-
34
VCE (V)
5
2004.01
3/5
2004.01
4/5
2004.01
5/5
JILIN SINO transistor | | |
6 | D4515 | NPN Transistor ATE transistor | | |
7 | D4516161CG5 | UPD4516161CG5
www.Da NEC data | |
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Número de pieza | Descripción | Fabricantes | |
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