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PN2369A Datasheet PDF Search Results

No Part number Description ( Function ) Manufacturers PDF
3 PN2369A
NPN switching transistors

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PN2369; PN2369A NPN switching transistors Product specification Supersedes data of 1997 May 07 1999 Apr 14 Philips Semiconductors Product specification NPN switching transistors FEATURES • Low current (max. 200 mA) • Low voltage (max. 15 V). APPLICATIONS • High-speed switching applications. DESCRIPTION NPN switching transistor in a TO-92; SOT54 plastic package. PINNING PIN 1 2 3 collector base emitter PN2369; PN2369A DESCRIPTION 1 handbook, halfpage 2 3 1 2 3 MAM279 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 13

Philips - PN2369A pdf datasheet
Philips
PN2369A datasheet pdf
2 PN2369A
NPN Switching Transistor

PN2369A / MMBT2369A / MMPQ2369 Discrete POWER & Signal Technologies PN2369A MMBT2369A C MMPQ2369 B E B E B E B E E C BE TO-92 SOT-23 Mark: 1S B SOIC-16 C C C C C C C C NPN Switching Transistor This device is designed for high speed saturation switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 15 40 4.5 200 -55 to +150 Units V V V mA °C Operating and Storage Junction Temperature Range *These ratings are limiting

Fairchild Semiconductor - PN2369A pdf datasheet
Fairchild Semiconductor
PN2369A datasheet pdf
1 PN2369A
NPN SILICON TRANSISTOR

2N5769 PN2369A NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5769 and PN2369A are epitaxial planar NPN Silicon Transistors designed for ultra high speed saturated switching applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Power Dissipation Operating and Storage Junction Temperature SYMBOL VCBO VCES VCEO VEBO IC ICM PD TJ, Tstg 40 40 15 4.5 200 500 350 -65 to +150 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST

Central Semiconductor Corp - PN2369A pdf datasheet
Central Semiconductor Corp
PN2369A datasheet pdf


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