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2 P9NK50Z STP9NK50Z

www.DataSheet.co.kr STP9NK50Z - STP9NK50ZFP STB9NK50Z - STB9NK50Z-1 N-CHANNEL 500V - 0.72Ω - 7.2A TO-220/FP/D2PAK/I2PAK Zener-Protected SuperMESH™ MOSFET TYPE STP9NK50Z STP9NK50ZFP STB9NK50Z STB9NK50Z-1 s s s s s s VDSS 500 500 500 500 V V V V RDS(on) < 0.85 Ω < 0.85 Ω < 0.85 Ω < 0.85 Ω ID 7.2 A 7.2 A 7.2 A 7.2 A Pw 110 W 30 W 110 W 110 W 1 2 TYPICAL RDS(on) = 0.72 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY 3 TO-220 TO-220FP 3 1 3 12 D2PAK I2PAK DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well es

STMicroelectronics - P9NK50Z pdf datasheet
STMicroelectronics
P9NK50Z datasheet pdf
1 P9NK50ZFP STP9NK50ZFP

STP9NK50Z - STP9NK50ZFP STB9NK50Z N-CHANNEL 500V - 0.72Ω - 7.2A TO-220/TO-220FP/D2PAK Zener-Protected SuperMESH™ Power MOSFET TYPE VDSS RDS(on) ID Pw STP9NK50Z STP9NK50ZFP STB9NK50Z 500 V 500 V 500 V < 0.85 Ω < 0.85 Ω < 0.85 Ω 7.2 A 7.2 A 7.2 A 110 W 30 W 110 W s TYPICAL RDS(on) = 0.72 Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s GATE CHARGE MINIMIZED s VERY LOW INTRINSIC CAPACITANCES s VERY GOOD MANUFACTURING REPEATIBILITY TO-220 3 2 1 TO-220FP 3 1 D2PAK DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip- based PowerMESH™ layout. In addition t

STMicroelectronics - P9NK50ZFP pdf datasheet
STMicroelectronics
P9NK50ZFP datasheet pdf


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