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P9NC60FP Datasheet PDF Search


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No Part number Description ( Function ) Manufacturers PDF
1 P9NC60FP STP9NC60FP

® STP9NC60 STP9NC60FP N - CHANNEL 600V - 0.6Ω - 9A TO-220/TO-220FP PowerMESH™ ΙΙ MOSFET T YPE V DSS 600 V 600 V R DS(on) < 0.75 Ω < 0.75 Ω ID 9.0 A 5.2 A STP9NC60 STP9NC60FP ν ν ν ν ν TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED 1 2 3 1 2 3 DESCRIPTION The PowerMESH™ II is the evolution of the first generation of MESH OVERLAY™ . The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggedness. APPLICATIONS ν HIGH CURREN

STMicroelectronics - P9NC60FP pdf datasheet
STMicroelectronics
P9NC60FP datasheet pdf



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P9NC60F Data sheets

No Description ( Function) Manufacturers PDF
P9NC60FP    STP9NC60FP

® STP9NC60 STP9NC60FP N - CHANNEL 600V - 0.6Ω - 9A TO-220/TO-220FP PowerMESH™ ΙΙ MOSFET T YPE V DSS 600 V 600 V R DS(on) < 0.75 Ω < 0.75 Ω ID 9.0 A 5.2 A STP9NC60 STP9NC60FP ν ν ν ν ν TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED 1 2 3 1 2 3 DESCRIPTION The PowerMESH™ II is the evolution of the first generation of MESH OVERLAY™ . The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggedness. APPLICATIONS ν HIGH CURREN

STMicroelectronics
STMicroelectronics
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