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P3NB90FP Datasheet PDF Search


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No Part number Description ( Function ) Manufacturers PDF
1 P3NB90FP STP3NB90FP

s s s s s w w a D . w S a t e e h U 4 t m o .c STP3NB90 STP3NB90FP N-CHANNEL 900V - 4 Ω - 3.5 A TO-220/TO-220FP PowerMesh™ MOSFET R DS(on) < 4.2 Ω < 4.2 Ω ID 3.5 A 3.5 A Pw 110 W 35 W TYPE VDSS 900 V 900 V STP3NB90 STP3NB90FP TYPICAL RDS(on) = 4 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES 3 1 2 TO-220 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination struct

ST Microelectronics - P3NB90FP pdf datasheet
ST Microelectronics
P3NB90FP datasheet pdf



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It can be published by the manufacturer to help people choose products or to help use the products.


P3NB90F Data sheets

No Description ( Function) Manufacturers PDF
P3NB90FP    STP3NB90FP

s s s s s w w a D . w S a t e e h U 4 t m o .c STP3NB90 STP3NB90FP N-CHANNEL 900V - 4 Ω - 3.5 A TO-220/TO-220FP PowerMesh™ MOSFET R DS(on) < 4.2 Ω < 4.2 Ω ID 3.5 A 3.5 A Pw 110 W 35 W TYPE VDSS 900 V 900 V STP3NB90 STP3NB90FP TYPICAL RDS(on) = 4 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES 3 1 2 TO-220 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination struct

ST Microelectronics
ST Microelectronics
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