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P3NB80FP Datasheet PDF Search


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No Part number Description ( Function ) Manufacturers PDF
1 P3NB80FP STP3NB80FP

m o .c U 4 STP3NB80 t e STP3NB80FP e h S N - CHANNEL 800V - 4.6Ω - 2.6A - TO-220/TO-220FP a t PowerMESH™ MOSFET a .D w w w ® TYPE V DSS R DS(on) ID STP3NB80 STP3NB80FP 800 V 800 V < 6.5 Ω < 6.5 Ω 2.6 A 2.6 A s s s s s TYPICAL RDS(on) = 4.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest

ST Microelectronics - P3NB80FP pdf datasheet
ST Microelectronics
P3NB80FP datasheet pdf



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It can be published by the manufacturer to help people choose products or to help use the products.


P3NB80F Data sheets

No Description ( Function) Manufacturers PDF
P3NB80FP    STP3NB80FP

m o .c U 4 STP3NB80 t e STP3NB80FP e h S N - CHANNEL 800V - 4.6Ω - 2.6A - TO-220/TO-220FP a t PowerMESH™ MOSFET a .D w w w ® TYPE V DSS R DS(on) ID STP3NB80 STP3NB80FP 800 V 800 V < 6.5 Ω < 6.5 Ω 2.6 A 2.6 A s s s s s TYPICAL RDS(on) = 4.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest

ST Microelectronics
ST Microelectronics
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